Discrimination between volume and interface traps in C (V) and photo I(V) experiments on 10-30 nm MOS capacitors

1993 ◽  
Vol 3 (11) ◽  
pp. 2101-2112
Author(s):  
J. Peisner ◽  
Y. Sangare ◽  
G. Lévêque
Keyword(s):  
Interface Traps ◽  
Mos Capacitors

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1063-1066 ◽  
Author(s):  
Ayayi Claude Ahyi ◽  
S.R. Wang ◽  
John R. Williams
Keyword(s):  
Field Effect ◽  
Gamma Dose ◽  
Interface Traps ◽  
Valence Band Edge ◽  
Field Effect Mobility ◽  
Irradiation Effects ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Radiation Induced ◽  
Radiation Tolerant

The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs passivated with nitric oxide. MOS capacitors (n and p) and n-channel lateral MOSFETs were irradiated unbiased (floating contacts) for a total gamma dose of 6.8Mrad (Si). The MOS capacitors were used to study the radiation-induced interface traps and fixed oxide charge that affect the performance of the MOSFETs. Radiationinduced interface traps were observed near the SiC valence band edge and just above mid-gap, and field effect channel mobility was reduced by 18-20% following irradiation. Even so, 4HMOSFETs appear to be more radiation tolerant than Si devices.

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1007-1010 ◽  
Author(s):  
Daniel B. Habersat ◽  
Aivars J. Lelis ◽  
G. Lopez ◽  
J.M. McGarrity ◽  
F. Barry McLean
Keyword(s):  
Room Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Interface Charges ◽  
Flatband Voltage ◽  
Oxide Traps ◽  
P Type

We have investigated the distribution of oxide traps and interface traps in 4H Silicon Carbide MOS devices. The density of interface traps, Dit, was characterized using standard C-V techniques on capacitors and charge pumping on MOSFETs. The number of oxide traps, NOT, was then calculated by measuring the flatband voltage VFB in p-type MOS capacitors. The amount that the measured flatband voltage shifts from ideal, minus the contributions due to the number of filled interface traps Nit, gives an estimate for the number of oxide charges present. We found Dit to be in the low 1011cm−2eV−1 range in midgap and approaching 1012 −1013cm−2eV−1 near the band edges. This corresponds to an Nit of roughly 2.5 ⋅1011cm−2 for a typical capacitor in flatband at room temperature. This data combined with measurements of VFB indicates the presence of roughly 1.3 ⋅1012cm−2 positive NOT charges in the oxide near the interface for our samples.

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces

2016 ◽  
Vol 858 ◽  
pp. 697-700 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Heiko B. Weber ◽  
Michael Krieger
Keyword(s):  
Electrical Properties ◽  
Response Time ◽  
Side Effect ◽  
Oxide Semiconductor ◽  
Epitaxial Layers ◽  
Interface Traps ◽  
Semiconductor Interface ◽  
Mos Capacitors ◽  
Thermally Grown Oxides ◽  
Thermally Grown

In this work the effect of phosphorus on the electrical properties of n-type 4H-SiC MOS capacitors is studied. Phosphorus ions are implanted into the epitaxial layers prior to the deposition of SiO2 by PECVD, in shallow depths and at concentrations at the oxide-semiconductor interface in the range of (5 x 1017…1 x 1019) cm-3. Those samples are compared with 31P-implanted 4H-SiC MOS capacitors with thermally grown oxides, which were primarily investigated in the previous work of the authors. It is shown that independently of the oxide technology phosphorus may lead to decrease of the density of interface traps, whose response time to the AC voltage is longer than 1 µs. The side-effect of the implantation of phosphorus is generation of the very fast interface states, which are able to follow the frequencies over 1 MHz.

Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

2008 ◽  
Vol 245 (7) ◽  
pp. 1378-1389 ◽  
Author(s):  
Gerhard Pensl ◽  
Svetlana Beljakowa ◽  
Thomas Frank ◽  
Kunyuan Gao ◽  
Florian Speck ◽  
...  
Keyword(s):  
Interface Traps ◽  
Mos Capacitors ◽  
Alternative Techniques

scholarly journals Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Mayank Chaturvedi ◽  
Sima Dimitrijev ◽  
Hamid Amini Moghadam ◽  
Daniel Haasmann ◽  
Peyush Pande ◽  
...  
Keyword(s):  
Interface Traps ◽  
Mos Capacitors

Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors

2011 ◽  
pp. 193-214 ◽  
Author(s):  
Gerhard Pensl ◽  
Svetlana Beljakowa ◽  
Thomas Frank ◽  
Kunyuan Gao ◽  
Florian Speck ◽  
...  
Keyword(s):  
Interface Traps ◽  
Mos Capacitors ◽  
Alternative Techniques

A time-dependent Verilog-A compact model for MOS capacitors with interface traps

2019 ◽  
Vol 58 (SB) ◽  
pp. SBBD06 ◽  
Author(s):  
Koichi Fukuda ◽  
Hidehiro Asai ◽  
Junichi Hattori ◽  
Mitsuaki Shimizu ◽  
Tamotsu Hashizume
Keyword(s):  
Time Dependent ◽  
Compact Model ◽  
Interface Traps ◽  
Mos Capacitors

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

2020 ◽  
Vol 1004 ◽  
pp. 635-641
Author(s):  
Peyush Pande ◽  
Sima Dimitrijev ◽  
Daniel Haasmann ◽  
Hamid Amini Moghadam ◽  
Philip Tanner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Comparative Analysis ◽  
Direct Measurement ◽  
Measurement Technique ◽  
Measurement Method ◽  
Gate Oxide ◽  
Interface Traps ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Direct Measurement Method

This paper presents a comparative analysis of the electrically active near-interface traps, energetically located above the bottom of conduction band. Two different samples of N-type SiC MOS capacitors were fabricated with gate oxides grown in (1) dry O2 (as-grown) and (2) dry O2 annealed in nitric oxide (nitride). Measurements performed by the direct measurement method revealed that the traps located further away from the SiO2/SiC interface are removed by nitridation. A spatially localized behaviour of NITs is observed only in the nitrided gate oxide but not in the as-grown gate oxide.

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