Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

2021 ◽  
Vol 129 (19) ◽  
pp. 195705
Author(s):  
Christopher J. Klingshirn ◽  
Asanka Jayawardena ◽  
Sarit Dhar ◽  
Rahul P. Ramamurthy ◽  
Dallas Morisette ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Mos Capacitors ◽  
Analytical Electron ◽  
Interface Structures

Electron Beam Damage of Biomolecules Assessed by Energy Loss Spectroscopy

1978 ◽  
Vol 36 (3) ◽  
pp. 61-69
Author(s):  
M. Isaacson ◽  
M.L. Collins ◽  
M. Listvan
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Structural Integrity ◽  
Analytical Electron Microscopy ◽  
High Dose ◽  
Dose Rates ◽  
Special Cases ◽  
Analytical Electron ◽  
Atom Migration ◽  
Beam Damage

Over the past five years it has become evident that radiation damage provides the fundamental limit to the study of blomolecular structure by electron microscopy. In some special cases structural determinations at very low doses can be achieved through superposition techniques to study periodic (Unwin & Henderson, 1975) and nonperiodic (Saxton & Frank, 1977) specimens. In addition, protection methods such as glucose embedding (Unwin & Henderson, 1975) and maintenance of specimen hydration at low temperatures (Taylor & Glaeser, 1976) have also shown promise. Despite these successes, the basic nature of radiation damage in the electron microscope is far from clear. In general we cannot predict exactly how different structures will behave during electron Irradiation at high dose rates. Moreover, with the rapid rise of analytical electron microscopy over the last few years, nvicroscopists are becoming concerned with questions of compositional as well as structural integrity. It is important to measure changes in elemental composition arising from atom migration in or loss from the specimen as a result of electron bombardment.

Analytical Electron Microscopy (AEM) of Meningeal Cells Exposed to Particulate Cobalt During Studies of Experimental Epilepsy

1982 ◽  
Vol 40 ◽  
pp. 186-187
Author(s):  
R.G. Frederickson ◽  
R.G. Ulrich ◽  
J.L. Culberson
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Experimental Epilepsy ◽  
Metallic Cobalt ◽  
Experimental Animals ◽  
X Ray ◽  
Brain Surface ◽  
Meningeal Cells ◽  
Analytical Electron ◽  
The Brain

Metallic cobalt acts as an epileptogenic agent when placed on the brain surface of some experimental animals. The mechanism by which this substance produces abnormal neuronal discharge is unknown. One potentially useful approach to this problem is to study the cellular and extracellular distribution of elemental cobalt in the meninges and adjacent cerebral cortex. Since it is possible to demonstrate the morphological localization and distribution of heavy metals, such as cobalt, by correlative x-ray analysis and electron microscopy (i.e., by AEM), we are using AEM to locate and identify elemental cobalt in phagocytic meningeal cells of young 80-day postnatal opossums following a subdural injection of cobalt particles.

Analytical Electron Microscopy Characterization of Electric Arc Furnace Dust

1981 ◽  
Vol 39 ◽  
pp. 134-135
Author(s):  
J. R. Porter ◽  
J. I. Goldstein ◽  
D. B. Williams
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Electric Arc Furnace ◽  
Electric Arc ◽  
Dust Particles ◽  
Particle Analysis ◽  
Arc Furnace ◽  
Analytical Electron ◽  
Residual Elements ◽  
Industry Practice

Alloy scrap metal is increasingly being used in electric arc furnace (EAF) steelmaking and the alloying elements are also found in the resulting dust. A comprehensive characterization program of EAF dust has been undertaken in collaboration with the steel industry and AISI. Samples have been collected from the furnaces of 28 steel companies representing the broad spectrum of industry practice. The program aims to develop an understanding of the mechanisms of formation so that procedures to recover residual elements or recycle the dust can be established. The multi-phase, multi-component dust particles are amenable to individual particle analysis using modern analytical electron microscopy (AEM) methods.Particles are ultrasonically dispersed and subsequently supported on carbon coated formvar films on berylium grids for microscopy. The specimens require careful treatment to prevent agglomeration during preparation which occurs as a result of the combined effects of the fine particle size and particle magnetism. A number of approaches to inhibit agglomeration are currently being evaluated including dispersal in easily sublimable organic solids and size fractioning by centrifugation.

Application of analytical electron microscopy to the study of partitioning of silicon in a 2 wt% Si eutectoid steel

1978 ◽  
Vol 36 (1) ◽  
pp. 616-617
Author(s):  
N. Ridley ◽  
S.A. Al-Salman ◽  
G.W. Lorimer
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Analytical Electron Microscopy ◽  
Eutectoid Steel ◽  
Minimum Diameter ◽  
Thin Foils ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Transformation Front

The application of the technique of analytical electron microscopy to the study of partitioning of Mn (1) and Cr (2) during the austenite-pearlite transformation in eutectoid steels has been described in previous papers. In both of these investigations, ‘in-situ’ analyses of individual cementite and ferrite plates in thin foils showed that the alloying elements partitioned preferentially to cementite at the transformation front at higher reaction temperatures. At lower temperatures partitioning did not occur and it was possible to identify a ‘no-partition’ temperature for each of the steels examined.In the present work partitioning during the pearlite transformation has been studied in a eutectoid steel containing 1.95 wt% Si. Measurements of pearlite interlamellar spacings showed, however, that except at the highest reaction temperatures the spacing would be too small to make the in-situ analysis of individual cementite plates possible, without interference from adjacent ferrite lamellae. The minimum diameter of the analysis probe on the instrument used, an EMMA-4 analytical electron microscope, was approximately 100 nm.

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

Application of analytical electron microscopy to studies of equilibrium and non-equilibrium segregation in materials

1992 ◽  
Vol 50 (2) ◽  
pp. 1214-1215
Author(s):  
Edward A Kenik
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Extended Defects ◽  
Probe Diameter ◽  
Specimen Holder ◽  
Analytical Electron ◽  
Scanning Transmission ◽  
Solute Atoms ◽  
Equilibrium Segregation ◽  
Non Equilibrium

Segregation of solute atoms to grain boundaries, dislocations, and other extended defects can occur under thermal equilibrium or non-equilibrium conditions, such as quenching, irradiation, or precipitation. Generally, equilibrium segregation is narrow (near monolayer coverage at planar defects), whereas non-equilibrium segregation exhibits profiles of larger spatial extent, associated with diffusion of point defects or solute atoms. Analytical electron microscopy provides tools both to measure the segregation and to characterize the defect at which the segregation occurs. This is especially true of instruments that can achieve fine (<2 nm width), high current probes and as such, provide high spatial resolution analysis and characterization capability. Analysis was performed in a Philips EM400T/FEG operated in the scanning transmission mode with a probe diameter of <2 nm (FWTM). The instrument is equipped with EDAX 9100/70 energy dispersive X-ray spectrometry (EDXS) and Gatan 666 parallel detection electron energy loss spectrometry (PEELS) systems. A double-tilt, liquid-nitrogen-cooled specimen holder was employed for microanalysis in order to minimize contamination under the focussed spot.

The effect of small additions of Cu on precipitation in Al-Mg-Si alloys

1990 ◽  
Vol 48 (2) ◽  
pp. 442-443
Author(s):  
M. Tamizifar ◽  
G. Cliff ◽  
R.W. Devenish ◽  
G.W. Lorimer
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Scanning Transmission Electron Microscope ◽  
Argon Atmosphere ◽  
Age Hardening ◽  
X Ray ◽  
Transmission Electron ◽  
Heat Treated ◽  
Analytical Electron ◽  
Scanning Transmission

Small additions of copper, <1 wt%, have a pronounced effect on the ageing response of Al-Mg-Si alloys. The object of the present investigation was to study the effect of additions of copper up to 0.5 wt% on the ageing response of a series of Al-Mg-Si alloys and to use high resolution analytical electron microscopy to determine the composition of the age hardening precipitates.The composition of the alloys investigated is given in Table 1. The alloys were heat treated in an argon atmosphere for 30m, water quenched and immediately aged either at 180°C for 15 h or given a duplex treatment of 180°C for 15 h followed by 350°C for 2 h2. The double-ageing treatment was similar to that carried out by Dumolt et al. Analyses of the precipitation were carried out with a HB 501 Scanning Transmission Electron Microscope. X-ray peak integrals were converted into weight fractions using the ratio technique of Cliff and Lorimer.

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

Analytical Electron Microscopy of Ion-Implanted Metals

1985 ◽  
Vol 43 ◽  
pp. 282-285
Author(s):  
D.I. Potter ◽  
M. Ahmed ◽  
K. Ruffing
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Friction And Wear ◽  
Analytical Electron Microscopy ◽  
Chemical Compositions ◽  
Surface Chemical ◽  
Near Surface ◽  
The Past ◽  
Analytical Electron ◽  
Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

Analytical Electron Microscopy of Surface-Modified Ceramics

1985 ◽  
Vol 43 ◽  
pp. 276-279
Author(s):  
P. S. Sklad
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Theoretical Models ◽  
Ceramic Materials ◽  
Solute Concentration ◽  
Second Phase ◽  
Analytical Electron ◽  
Implantation Techniques ◽  
Lattice Damage ◽  
Surface Modified

Over the past several years, it has become increasingly evident that materials for proposed advanced energy systems will be required to operate at high temperatures and in aggressive environments. These constraints make structural ceramics attractive materials for these systems. However it is well known that the condition of the specimen surface of ceramic materials is often critical in controlling properties such as fracture toughness, oxidation resistance, and wear resistance. Ion implantation techniques offer the potential of overcoming some of the surface related limitations.While the effects of implantation on surface sensitive properties may be measured indpendently, it is important to understand the microstructural evolution leading to these changes. Analytical electron microscopy provides a useful tool for characterizing the microstructures produced in terms of solute concentration profiles, second phase formation, lattice damage, crystallinity of the implanted layer, and annealing behavior. Such analyses allow correlations to be made with theoretical models, property measurements, and results of complimentary techniques.

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