Tetragonal ZrO2-Gated Ge MOS Capacitors Fabricated on Si Substrate

2019 ◽  
Vol 28 (5) ◽  
pp. 153-160 ◽  
Author(s):  
Min-Lin Wu ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Yung-Hsien Wu
Keyword(s):  
Tetragonal Zro2 ◽  
Si Substrate ◽  
Mos Capacitors

Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors

2007 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Hideok Lee ◽  
Se-Hoon Lee ◽  
Sanjay Banerjee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Combined Effects ◽  
Si Substrate ◽  
Mos Capacitors

Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

2011 ◽  
Vol 158 (4) ◽  
pp. H410 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Jia-Rong Wu ◽  
Min-Lin Wu ◽  
Lun-Lun Chen ◽  
Chia-Chun Lin
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Tetragonal Zro2 ◽  
Si Substrate

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

2011 ◽  
Vol 470 ◽  
pp. 135-139 ◽  
Author(s):  
Naoya Morisawa ◽  
Mitsuhisa Ikeda ◽  
Katsunori Makihara ◽  
Seiichi Miyazaki
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Floating Gate ◽  
Light Irradiation ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Si Substrate ◽  
Mos Capacitors ◽  
Mos Structures ◽  
Si Quantum Dots

We have studied the effect of 1310 nm light irradiation on the charge distribution of a hybrid floating gate consisting of silicon quantum dots (Si-QDs) and NiSi Nanodots (NiSi-NDs) in MOS capacitors. The light irradiation resulted in reduced flat-band voltage shifts of the MOS capacitors in comparison to the shift in the dark. This result can be interpreted in terms of the shift of the charge centroid toward the gate side in the hybrid floating gate caused by the photoexcitation of electrons in NiSi-NDs and the subsequent electron tunneling to Si-QDs. The capacitance of the MOS capacitors at constant gate biases was modulated with pulsed light irradiation. When the light irradiation was turned off, capacitance recovered to its level in the dark, indicating that the photoexited charges were transferred between the Si-QDs and the NiSi-NDs without being emitted to the Si substrate and gate electrode.

Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate

2005 ◽  
Author(s):  
Toshihiro Matsuda ◽  
Takashi Ibe ◽  
Kiyoshi Nishihara ◽  
Hideyuki Iwata ◽  
Satoshi Iwatsubo ◽  
...  
Keyword(s):  
Si Substrate ◽  
Mos Capacitors ◽  
P Type

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

Sign in / Sign up

Export Citation Format

Share Document