Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

2004 ◽  
Vol 84 (4) ◽  
pp. 535-537 ◽  
Author(s):  
E. J. Miller ◽  
E. T. Yu ◽  
P. Waltereit ◽  
J. S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Molecular Beam ◽  
Reverse Bias

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

2002 ◽  
Vol 81 (1) ◽  
pp. 79-81 ◽  
Author(s):  
J. W. P. Hsu ◽  
M. J. Manfra ◽  
R. J. Molnar ◽  
B. Heying ◽  
J. S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Direct Imaging ◽  
Screw Dislocations

Dark Current Reduction in Near Infrared P-I-N Detector Diodes Fabricated from In.75Ga.25As Grown by Molecular Beam Epitaxy on InP Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Micovic ◽  
W. Z. Cai ◽  
Y. Ren ◽  
J. Neal ◽  
S. F. Nelson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Dark Current ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Attractive Alternative ◽  
Cutoff Wavelength ◽  
Dark Current Density ◽  
Inp Substrates ◽  
Reference Samples

ABSTRACTWe have investigated several approaches to improve the material quality of lattice-mismatched In.75Ga.25As grown by Molecular Beam Epitaxy (MBE) on (100) InP substrates. They include linear grading of In composition from lattice matched In.53Ga.47As to In.75Ga.25As in a 1 μm buffer layer grown at reduced substrate temperature, in combination with various in situ annealing and material regrowth steps. The material was used for fabrication of mesa-structure p-i-n photodetectors with 2.2 μm cutoff wavelength. The room temperature dark current density at 1 V reverse bias was approximately 2 mA/cm2 in all structures that were subjected to anneal and regrowth process, a factor of three improvement over reference samples which were not subjected to annealing and regrowth. The dark current density at 15 V reverse bias (10 mA/cm2 for the best devices) was at least two orders of magnitude lower in all annealed samples than in reference samples. These results suggest that the MBE grown material can be an attractive alternative to the vapor phase epitaxy (VPE) grown material which is commonly used for fabrication of these detectors.

Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy

2010 ◽  
Vol 96 (10) ◽  
pp. 102111 ◽  
Author(s):  
J. J. M. Law ◽  
E. T. Yu ◽  
G. Koblmüller ◽  
F. Wu ◽  
J. S. Speck
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reverse Bias

Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias

2018 ◽  
Vol 6 (42) ◽  
pp. 11368-11373 ◽  
Author(s):  
Qiu Ai ◽  
Kewei Liu ◽  
Hongyu Ma ◽  
Jialin Yang ◽  
Xing Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Zno Film ◽  
Light Emitting ◽  
Gan Film

ZnO film was fabricated on p-GaN film using the molecular beam epitaxy technique to form heterojunction light emitting diodes (LEDs).

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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