Demonstration and analysis of reduced reverse-bias leakage current via design of nitride semiconductor heterostructures grown by molecular-beam epitaxy

2006 ◽  
Vol 99 (1) ◽  
pp. 014501 ◽  
Author(s):  
H. Zhang ◽  
E. T. Yu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Semiconductor Heterostructures ◽  
Nitride Semiconductor

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

2004 ◽  
Vol 84 (4) ◽  
pp. 535-537 ◽  
Author(s):  
E. J. Miller ◽  
E. T. Yu ◽  
P. Waltereit ◽  
J. S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Molecular Beam ◽  
Reverse Bias

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

2002 ◽  
Vol 81 (1) ◽  
pp. 79-81 ◽  
Author(s):  
J. W. P. Hsu ◽  
M. J. Manfra ◽  
R. J. Molnar ◽  
B. Heying ◽  
J. S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Direct Imaging ◽  
Screw Dislocations

Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy

2011 ◽  
Vol 323 (1) ◽  
pp. 351-354 ◽  
Author(s):  
S.N.M. Tawil ◽  
D. Krishnamurthy ◽  
R. Kakimi ◽  
S. Emura ◽  
S. Hasegawa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Magnetic Semiconductor ◽  
Semiconductor Heterostructures
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