Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy

2006 ◽  
Vol 99 (2) ◽  
pp. 023703 ◽  
Author(s):  
H. Zhang ◽  
E. J. Miller ◽  
E. T. Yu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Molecular Beam ◽  
Schottky Contacts

scholarly journals Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

2003 ◽  
Vol 94 (12) ◽  
pp. 7611 ◽  
Author(s):  
E. J. Miller ◽  
D. M. Schaadt ◽  
E. T. Yu ◽  
X. L. Sun ◽  
L. J. Brillson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Contacts ◽  
Leakage Currents ◽  
Microscopic Mechanism

Titanium/Gold Schottky Contacts on P-Type GaAs Grown on (111)A and (100) GaAs Substrates Using Molecular Beam Epitaxy

1992 ◽  
Vol 31 (Part 2, No. 7B) ◽  
pp. L924-L927 ◽  
Author(s):  
David R. Lovell ◽  
Teiji Yamamoto ◽  
Makoto Inai ◽  
Toshihiko Takebe ◽  
Kikuo Kobayashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Contacts ◽  
Gaas Substrates ◽  
P Type

Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy

1995 ◽  
Vol 66 (25) ◽  
pp. 3471-3473 ◽  
Author(s):  
Wei Gao ◽  
Paul R. Berger ◽  
Robert G. Hunsperger ◽  
G. Zydzik ◽  
W. W. Rhodes ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Contacts

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

2004 ◽  
Vol 84 (4) ◽  
pp. 535-537 ◽  
Author(s):  
E. J. Miller ◽  
E. T. Yu ◽  
P. Waltereit ◽  
J. S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Molecular Beam ◽  
Reverse Bias

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 913-916 ◽  
Author(s):  
Y Kribes ◽  
I Harrison ◽  
B Tuck ◽  
T S Cheng ◽  
C T Foxon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Contacts
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