Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

2002 ◽  
Vol 91 (12) ◽  
pp. 9821 ◽  
Author(s):  
E. J. Miller ◽  
D. M. Schaadt ◽  
E. T. Yu ◽  
C. Poblenz ◽  
C. Elsass ◽  
...  
Keyword(s):  
Surface Modification ◽  
Molecular Beam Epitaxy ◽  
Atomic Force Microscope ◽  
Leakage Current ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Atomic Force

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

2004 ◽  
Vol 84 (4) ◽  
pp. 535-537 ◽  
Author(s):  
E. J. Miller ◽  
E. T. Yu ◽  
P. Waltereit ◽  
J. S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Molecular Beam ◽  
Reverse Bias

Films Grown on Vicinal GaAs(111) Substrates By Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
K. Yang ◽  
L. J. Schowalter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Atomic Force Microscope ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
Atomic Force ◽  
Morphology Of Films ◽  
Surface Morphologies

ABSTRACTThe faceted surface morphology of films grown on on-axis GaAs(111) substrates in the reconstruction regime is studied with an atomic force microscope. It reveals that facets are vicinal surfaces. Surface morphologies of films grown on substrates tilted toward different directions have been compared. An explanation is given for all observed surface morphologies. Smooth films can only be obtained on substrates tilted toward [211] in the surface reconstruction regime.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier
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