Near-equilibrium strain relaxation and misfit dislocation interactions in PbTe on PbSe (001) heteroepitaxy

2003 ◽  
Vol 83 (25) ◽  
pp. 5160-5162 ◽  
Author(s):  
Karin Wiesauer ◽  
Gunther Springholz
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Interactions ◽  
Equilibrium Strain

Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers

2001 ◽  
Vol 673 ◽  
Author(s):  
A. Maxwell Andrews ◽  
J.S. Speck ◽  
A.E. Romanov ◽  
M. Bobeth ◽  
W. Pompe
Keyword(s):  
Misfit Dislocation ◽  
Film Growth ◽  
Strain Relaxation ◽  
Dislocation Generation ◽  
Force Microscopy ◽  
Step Flow ◽  
Atomic Force ◽  
Subsequent Step ◽  
Step Flow Growth ◽  
Lateral Scale

ABSTRACTAn approach is developed for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth. It is demonstrated that both strain relaxation associated with misfit dislocation formation and subsequent step elimination (e.g. by step-flow growth) are responsible for the appearance of nanoscopic surface height undulations (0.1-10 nm) on a mesoscopic (∼100 nm) lateral scale. The results of Monte Carlo simulations for dislocation- assisted strain relaxation and subsequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% strain relaxed In0.25Ga0.75As layers. The model is supported by atomic force microscopy (AFM) observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation generation.

scholarly journals Observing Misfit Dislocation Interactions Across Thin Film Oxide Heterostructures

2016 ◽  
Vol 22 (S3) ◽  
pp. 1506-1507
Author(s):  
Everett D. Grimley ◽  
Edward Sachet ◽  
Brian F. Donovan ◽  
Patrick E. Hopkins ◽  
Jon-Paul Maria ◽  
...  
Keyword(s):  
Thin Film ◽  
Misfit Dislocation ◽  
Oxide Heterostructures ◽  
Dislocation Interactions

Quasicontinuum study the influence of misfit dislocation interactions on nanoindentation

2011 ◽  
Vol 50 (11) ◽  
pp. 3162-3170 ◽  
Author(s):  
Junwan Li ◽  
Huaibao Lu ◽  
Yushan Ni ◽  
Jifa Mei
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Interactions

The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers.

1991 ◽  
Vol 239 ◽  
Author(s):  
R. Hull ◽  
J. C. Bean ◽  
F. Ross ◽  
D. Bahnck ◽  
L. J. Pencolas
Keyword(s):  
Misfit Dislocation ◽  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Misfit Dislocations ◽  
Slip Systems ◽  
Strained Layers ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Strain Stress ◽  
Kinetics Of

ABSTRACTThe geometries, microstructures, energetics and kinetics of misfit dislocations as functions of surface orientation and the magnitude of strain/stress are investigated experimentally and theoretically. Examples are drawn from (100), (110) and (111) surfaces and from the GexSi1–x/Si and InxGa1–x/GaAs systems. It is shown that the misfit dislocation geometries and microstructures at lattice mismatch stresses < - 1GPa may in general be predicted by operation of the minimum magnitude Burgers vector slipping on the widest spaced planes. At stresses of the order several GPa, however, new dislocation systems may become operative with either modified Burgers vectors or slip systems. Dissociation of totál misfit dislocations into partial dislocations is found to play a crucial role in strain relaxation, on surfaces other than (100) under compressive stress.

Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP

2012 ◽  
Vol 112 (2) ◽  
pp. 023520 ◽  
Author(s):  
R. M. France ◽  
W. E. McMahon ◽  
A. G. Norman ◽  
J. F. Geisz ◽  
M. J. Romero
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Glide ◽  
Plane Distribution

Strain relaxation in ultrathin films: A modified theory of misfit-dislocation energetics

1993 ◽  
Vol 47 (20) ◽  
pp. 13730-13736 ◽  
Author(s):  
A. P. Payne ◽  
B. M. Lairson ◽  
B. M. Clemens
Keyword(s):  
Misfit Dislocation ◽  
Ultrathin Films ◽  
Strain Relaxation ◽  
Modified Theory

scholarly journals Non-equilibrium strain relaxation noise in the relaxor ferroelectric (PbMg1/3Nb2/3O3)1-x(PbTiO3)x

2018 ◽  
Vol 124 (23) ◽  
pp. 234102 ◽  
Author(s):  
Xinyang Zhang ◽  
Thomas J. Kennedy ◽  
Eugene V. Colla ◽  
M. B. Weissman ◽  
D. D. Viehland
Keyword(s):  
Strain Relaxation ◽  
Relaxor Ferroelectric ◽  
Equilibrium Strain ◽  
Non Equilibrium

Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1−xGex Layers on Si(001) Substrates

2001 ◽  
Vol 686 ◽  
Author(s):  
S.H. Christiansen ◽  
P.M. Mooney ◽  
J.O. Chu ◽  
A. Grill
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Transmission Electron ◽  
Microscopy Techniques

AbstractStrain relaxation in He+-implanted and annealed Si(001)/Si1−xGex heterostructures was investigated using transmission electron microscopy techniques and x-ray diffraction. Depending on the implant conditions, bubbles and/or platelets form below the Si/Si1−xGex interface upon annealing and act as nucleation sources for dislocation loops. The dislocation loops extend to the interface and form a misfit dislocation network there, resulting in relaxation of 30-80% of the strain in layers as thin as 100-300 nm. When bubbles form close to the interface, dislocations nucleate by a climb loop mechanism. When smaller bubbles form deeper in the Si substrate an irregular three-dimensional dislocation network forms below the interface resulting in an irregular misfit dislocation network at the interface. When platelets form deeper in the Si substrate, prismatic punching of dislocation loops is observed and dislocation reactions of misfit dislocations at the interface result in Lomer dislocation formation.

Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si

1998 ◽  
Vol 83 (7) ◽  
pp. 3773-3776 ◽  
Author(s):  
G. P. Watson ◽  
J. L. Benton ◽  
Y. H. Xie ◽  
E. A. Fitzgerald
Keyword(s):  
Misfit Dislocation ◽  
Photoluminescence Spectra ◽  
Dislocation Interactions
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