scholarly journals Non-equilibrium strain relaxation noise in the relaxor ferroelectric (PbMg1/3Nb2/3O3)1-x(PbTiO3)x

2018 ◽  
Vol 124 (23) ◽  
pp. 234102 ◽  
Author(s):  
Xinyang Zhang ◽  
Thomas J. Kennedy ◽  
Eugene V. Colla ◽  
M. B. Weissman ◽  
D. D. Viehland
Keyword(s):  
Strain Relaxation ◽  
Relaxor Ferroelectric ◽  
Equilibrium Strain ◽  
Non Equilibrium

scholarly journals Vertically Aligned Single-Crystalline CoFe2O4 Nanobrush Architectures with High Magnetization and Tailored Magnetic Anisotropy

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 472
Author(s):  
Lisha Fan ◽  
Xiang Gao ◽  
Thomas O. Farmer ◽  
Dongkyu Lee ◽  
Er-Jia Guo ◽  
...  
Keyword(s):  
Self Assembly ◽  
Strain Relaxation ◽  
Critical Role ◽  
Misfit Strain ◽  
Interface Layer ◽  
Single Crystalline ◽  
Precise Control ◽  
Scanning Transmission ◽  
Vertically Aligned ◽  
Non Equilibrium

Micrometer-tall vertically aligned single-crystalline CoFe2O4 nanobrush architectures with extraordinarily large aspect ratio have been achieved by the precise control of a kinetic and thermodynamic non-equilibrium pulsed laser epitaxy process. Direct observations by scanning transmission electron microscopy reveal that the nanobrush crystal is mostly defect-free by nature, and epitaxially connected to the substrate through a continuous 2D interface layer. In contrast, periodic dislocations and lattice defects such as anti-phase boundaries and twin boundaries are frequently observed in the 2D interface layer, suggesting that interface misfit strain relaxation under a non-equilibrium growth condition plays a critical role in the self-assembly of such artificial architectures. Magnetic property measurements have found that the nanobrushes exhibit a saturation magnetization value of 6.16 μB/f.u., which is much higher than the bulk value. The discovery not only enables insights into an effective route for fabricating unconventional high-quality nanostructures, but also demonstrates a novel magnetic architecture with potential applications in nanomagnetic devices.

Application of analytical electron microscopy to studies of equilibrium and non-equilibrium segregation in materials

1992 ◽  
Vol 50 (2) ◽  
pp. 1214-1215
Author(s):  
Edward A Kenik
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Extended Defects ◽  
Probe Diameter ◽  
Specimen Holder ◽  
Analytical Electron ◽  
Scanning Transmission ◽  
Solute Atoms ◽  
Equilibrium Segregation ◽  
Non Equilibrium

Segregation of solute atoms to grain boundaries, dislocations, and other extended defects can occur under thermal equilibrium or non-equilibrium conditions, such as quenching, irradiation, or precipitation. Generally, equilibrium segregation is narrow (near monolayer coverage at planar defects), whereas non-equilibrium segregation exhibits profiles of larger spatial extent, associated with diffusion of point defects or solute atoms. Analytical electron microscopy provides tools both to measure the segregation and to characterize the defect at which the segregation occurs. This is especially true of instruments that can achieve fine (<2 nm width), high current probes and as such, provide high spatial resolution analysis and characterization capability. Analysis was performed in a Philips EM400T/FEG operated in the scanning transmission mode with a probe diameter of <2 nm (FWTM). The instrument is equipped with EDAX 9100/70 energy dispersive X-ray spectrometry (EDXS) and Gatan 666 parallel detection electron energy loss spectrometry (PEELS) systems. A double-tilt, liquid-nitrogen-cooled specimen holder was employed for microanalysis in order to minimize contamination under the focussed spot.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Local atomic structure of relaxor ferroelectric solids studied by pulsed neutron scattering

1994 ◽  
Vol 52 ◽  
pp. 554-555
Author(s):  
T. Egami ◽  
H. D. Rosenfeld ◽  
S. Teslic
Keyword(s):  
Neutron Scattering ◽  
Atomic Structure ◽  
Argonne National Laboratory ◽  
Relaxor Ferroelectrics ◽  
Relaxor Ferroelectric ◽  
Crystallographic Structure ◽  
Chemical Inhomogeneity ◽  
Distribution Analysis ◽  
Ferroelectric Transition ◽  
Pulsed Neutron

Relaxor ferroelectrics, such as Pb(Mg1/3Nb2/3)O3 (PMN) or (Pb·88La ·12)(Zr·65Ti·35)O3 (PLZT), show diffuse ferroelectric transition which depends upon frequency of the a.c. field. In spite of their wide use in various applications details of their atomic structure and the mechanism of relaxor ferroelectric transition are not sufficiently understood. While their crystallographic structure is cubic perovskite, ABO3, their thermal factors (apparent amplitude of thermal vibration) is quite large, suggesting local displacive disorder due to heterovalent ion mixing. Electron microscopy suggests nano-scale structural as well as chemical inhomogeneity.We have studied the atomic structure of these solids by pulsed neutron scattering using the atomic pair-distribution analysis. The measurements were made at the Intense Pulsed Neutron Source (IPNS) of Argonne National Laboratory. Pulsed neutrons are produced by a pulsed proton beam accelerated to 750 MeV hitting a uranium target at a rate of 30 Hz. Even after moderation by a liquid methane moderator high flux of epithermal neutrons with energies ranging up to few eV’s remain.

Equilibrium and Non-Equilibrium Statistical Thermodynamics

2004 ◽  
Author(s):  
Michel Le Bellac ◽  
Fabrice Mortessagne ◽  
G. George Batrouni
Keyword(s):  
Statistical Thermodynamics ◽  
Non Equilibrium

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films

BULK NON-EQUILIBRIUM SUPERCONDUCTOR PROBED BY BALLISTIC PHONONS

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-541-C6-542
Author(s):  
B. Pannetier ◽  
J. P. Maneval
Keyword(s):  
Ballistic Phonons ◽  
Non Equilibrium

NON-EQUILIBRIUM PHENOMENA IN SUPERCONDUCTING MICROBRIDGES

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-500-C6-502 ◽  
Author(s):  
J. Bindslev Hansen ◽  
P. Jespersen ◽  
P. E. Lindelof
Keyword(s):  
Non Equilibrium
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