Active silicon-based two-dimensional slab photonic crystal structures based on erbium-doped hydrogenated amorphous silicon alloyed with carbon

2003 ◽  
Vol 83 (16) ◽  
pp. 3239-3241 ◽  
Author(s):  
Yong-Seok Choi ◽  
Joo Yeon Sung ◽  
Se-Heon Kim ◽  
Jung H. Shin ◽  
Yong-Hee Lee
1998 ◽  
Vol 507 ◽  
Author(s):  
Lin Jiang ◽  
Eric A. Schiff ◽  
Qi Wang ◽  
S. Guha ◽  
J. Yang

ABSTRACTGrazing-incidence measurements of polarized electroabsorption (EA) in p-i-n solar cells based on hydrogenated amorphous silicon (a-Si:H) are presented. We confirm polarized electroabsorption effect of a-Si:H with the present “sandwich” electrodes, in fact, we find a significantly stronger polarization dependence compared with earlier work based on electroabsorption detected using coplanar electrodes on a-Si:H thin films. We did not reproduce the significant dependence of the polarized electroabsorption upon light soaking, which was found in previous work with coplanar electrodes. We speculate the difference between two electrode geometries is due to the space charge and two dimensional fields.


2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.


1989 ◽  
Vol 114 ◽  
pp. 648-650 ◽  
Author(s):  
Tatsuo Shimizu ◽  
Xixiang Xu ◽  
Hiroyuki Sasaki ◽  
Akiharu Morimoto ◽  
Minoru Kumeda

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