scholarly journals Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon

2004 ◽  
Vol 53 (1) ◽  
pp. 151
Author(s):  
Zhao Qian ◽  
Wang Bo ◽  
Yan Hui ◽  
M.Kumeda ◽  
T.Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Annealing Effect ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

Luminescence quenching in erbium‐doped hydrogenated amorphous silicon

1996 ◽  
Vol 68 (1) ◽  
pp. 46-48 ◽  
Author(s):  
Jung H. Shin ◽  
R. Serna ◽  
G. N. van den Hoven ◽  
A. Polman ◽  
W. G. J. H. M. van Sark ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Luminescence Quenching ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering

1999 ◽  
Vol 79 (8) ◽  
pp. 1205-1211 ◽  
Author(s):  
M. Kechouane ◽  
N. Beldi ◽  
O. Mouheb ◽  
T. Mohammed-Brahim ◽  
A. S. Barriere ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dc Sputtering ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film

2003 ◽  
Vol 94 (9) ◽  
pp. 5599-5604 ◽  
Author(s):  
C. Y. Chen ◽  
W. D. Chen ◽  
S. F. Song ◽  
Z. J. Xu ◽  
X. B. Liao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Erbium Doped ◽  
Silicon Suboxide ◽  
Hydrogenated Amorphous

Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon

1995 ◽  
Vol 67 (24) ◽  
pp. 3599-3601 ◽  
Author(s):  
M. S. Bresler ◽  
O. B. Gusev ◽  
V. Kh. Kudoyarova ◽  
A. N. Kuznetsov ◽  
P. E. Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Room Temperature Photoluminescence ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

Erbium-Doped A-Si:H Films Fabricated by Standard Pecvd Using Metalorganics

1998 ◽  
Vol 507 ◽  
Author(s):  
N.A. Feoktistov ◽  
V.G. Golubev ◽  
A.V. Medvedev ◽  
A.B. Pevtsov
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Conductivity Ratio ◽  
Photoluminescence Spectra ◽  
Light Emitting ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

ABSTRACT1·54 jim light-emitting erbium-doped hydrogenated amorphous silicon films have been fabricated by standard low temperature (200 – 250 °C) PE CVD technique. The films were doped with erbium during the deposition by making use of a new fluorine-containing metalorganic compound Er(HFA)3*DME [where HFA=CF3C(O)CHC(O)CF3, DME=CH3OCH2CH2OCH3]. Photoluminescence spectra of the a-Si(Er):H films were studied within the range 0·6–1·7 pm at both 77 K and 295 K. A photoconductivity was also detected. The photo- to dark conductivity ratio was on the order of 103.

Luminescence quenching in erbium‐doped hydrogenated amorphous silicon

1996 ◽  
Vol 68 (7) ◽  
pp. 997-999 ◽  
Author(s):  
Jung H. Shin ◽  
R. Serna ◽  
G. N. van den Hoven ◽  
A. Polman ◽  
W. G. J. H. M. van Sark ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Luminescence Quenching ◽  
Erbium Doped ◽  
Hydrogenated Amorphous
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