Grazing Incidence Measurements of Polarized Electroabsorption and Light Soaking Effect on Amorphous Silicon Based Solar Cells

1998 ◽  
Vol 507 ◽  
Author(s):  
Lin Jiang ◽  
Eric A. Schiff ◽  
Qi Wang ◽  
S. Guha ◽  
J. Yang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Grazing Incidence ◽  
Two Dimensional ◽  
Coplanar Electrodes ◽  
The Difference ◽  
Silicon Based ◽  
Hydrogenated Amorphous

ABSTRACTGrazing-incidence measurements of polarized electroabsorption (EA) in p-i-n solar cells based on hydrogenated amorphous silicon (a-Si:H) are presented. We confirm polarized electroabsorption effect of a-Si:H with the present “sandwich” electrodes, in fact, we find a significantly stronger polarization dependence compared with earlier work based on electroabsorption detected using coplanar electrodes on a-Si:H thin films. We did not reproduce the significant dependence of the polarized electroabsorption upon light soaking, which was found in previous work with coplanar electrodes. We speculate the difference between two electrode geometries is due to the space charge and two dimensional fields.

Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Electronic Transport Properties of Hydrogenated Amorphous Silicon Thin Films Deposited on Plastic Substrates

2011 ◽  
Vol 221 ◽  
pp. 189-193
Author(s):  
Ying Ge Li ◽  
Dong Xing Du
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hydrogenated Amorphous Silicon ◽  
Plastic Substrates ◽  
Electronic Transport Properties ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Aiming for potential application in flexible solar cells, electronic transport properties are studied for hydrogenated amorphous silicon thin films on plastic substrates. Intrinsic hydrogenated amorphous silicon layers are deposited on Kapton and Upilex-s polyimide substrates at temperatures of 100°C and 180°C by plasma enhanced chemical vapor deposition (PECVD) system. Layers on 75μm and 125 thick Kapton and on 125 Upilex-s substrates are characterized by dark conductivity and activation energy measurements. It can be concluded that the intrinsic layer on 125μm thick Kapton and Upilex-s plastic both have favorable electrical properties and therefore could be employed as substrate material for flexible solar cells.

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