Pillar-lattice-assisted stress-free silicon-on-insulator

2003 ◽  
Vol 83 (16) ◽  
pp. 3323-3325 ◽  
Author(s):  
Jan Haisma
Keyword(s):  
Silicon On Insulator ◽  
Free Silicon

scholarly journals Release-free silicon-on-insulator cavity optomechanics

Optica ◽  
2017 ◽  
Vol 4 (9) ◽  
pp. 1147 ◽  
Author(s):  
Christopher J. Sarabalis ◽  
Yanni D. Dahmani ◽  
Rishi N. Patel ◽  
Jeff T. Hill ◽  
Amir H. Safavi-Naeini
Keyword(s):  
Silicon On Insulator ◽  
Cavity Optomechanics ◽  
Free Silicon

scholarly journals FSR-free silicon-on-insulator microring resonator based filter with bent contra-directional couplers

2016 ◽  
Vol 24 (25) ◽  
pp. 29009 ◽  
Author(s):  
Nourhan Eid ◽  
Robert Boeck ◽  
Hasitha Jayatilleka ◽  
Lukas Chrostowski ◽  
Wei Shi ◽  
...  
Keyword(s):  
Microring Resonator ◽  
Silicon On Insulator ◽  
Directional Couplers ◽  
Free Silicon

Growth of large areas of grain boundary-free silicon-on-insulator

1983 ◽  
Vol 19 (23) ◽  
pp. 985 ◽  
Author(s):  
J.P. Colinge ◽  
D. Bensahel ◽  
M. Alamome ◽  
M. Haond ◽  
J.C. Pfister
Keyword(s):  
Grain Boundary ◽  
Silicon On Insulator ◽  
Free Silicon

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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