Zone‐melting recrystallization with enhanced radiative heating for preparation of subboundary‐free silicon‐on‐insulator thin films

1989 ◽  
Vol 55 (12) ◽  
pp. 1238-1240 ◽  
Author(s):  
C. K. Chen ◽  
J. S. Im
Keyword(s):  
Thin Films ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Radiative Heating ◽  
Free Silicon

Melting and Solidification Dynamics in Zone Melting of Si Films.

1987 ◽  
Vol 107 ◽  
Author(s):  
D. Dutartre
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Experimental Conditions ◽  
Melting Front ◽  
Physical Mechanisms ◽  
Si Films ◽  
Melting And Solidification

AbstractWe discuss the physics involved in the melting and solidification of Silicon On Insulator thin films (SOI) using lamp or graphite strip heaters. The melting front, called “explosive melting”, controls to a large part the final morphological quality of the SOI film. It exhibits instabilities which can (i) nucleate the dewetting of the film, (ii) cause voids, and (iii) produce a poor surface morphology. The morphologies of the solidification fronts are analyzed. We show that, depending on the experimental conditions, different physical mechanisms are responsible for the front breakdown. Thus we propose that the variety of front morphologies results from the variety of the mechanisms involved, and of their combinations with the “faceting effects”.

Thermal evaluation of zone-melting recrystallization of thin-film structures over a wide range of melting points

1995 ◽  
Vol 10 (4) ◽  
pp. 877-884
Author(s):  
Richard D. Robinson ◽  
Peter Y. Wong ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thin Films ◽  
Thermal Environment ◽  
Zone Melting ◽  
Radiative Heating ◽  
Melting Points ◽  
Large Area ◽  
Polycrystalline Thin Films ◽  
Wide Range ◽  
Processing Control ◽  
Lateral Epitaxy

Zone-melting recrystallization (ZMR) is a lateral epitaxy technique used to recrystallize polycrystalline thin films on substrates. Large-area multilayer structures of thin films processed with ZMR are usable in microelectronics applications. During the processing, slight variations in thermal gradients can lead to different crystalline qualities. Thus, processing uniformity over the wafer is strongly affected by the sensitivity of both the melt width and the solid/liquid interface to changes in the thermal environment. Processing control must either be set initially in a stable operating range or adjusted dynamically to variations in processing. Numerical simulations of the ZMR process were conducted to evaluate the sensitivity of the process over a wide range of temperatures and materials. Results indicate that material with melting points below 900 °C are very sensitive to temperature disturbances. This is due to the increased influence of conductive heating and decreased influence of radiative heating. The increased reflectivity during phase change curbs the amount of absorbed radiation. As the absorbed radiation becomes less influential, the sensitivity of the slush width decreases. Conductive effects should be considered when processing materials with melting points at or below 900 °C.

Liquid-Solid Interface Morphologies and Defect Structures in Zone-Melting-Recrystallized Silicon-On-Insulator Films

1987 ◽  
Vol 107 ◽  
Author(s):  
J. S. Im ◽  
C. K. Chen ◽  
C. V. Thompson ◽  
M. W. Geis ◽  
H. Tomita
Keyword(s):  
Zone Melting ◽  
Silicon On Insulator ◽  
Radiative Heating ◽  
Interfacial Region ◽  
Defect Structures ◽  
Interface Morphology ◽  
Experimental Conditions ◽  
Solid Interface ◽  
Free Films

AbstractIn-situ optical microscopy has been used to observe liquid-solid interface morphologies during zone-melting recrystallization of silicon-on-insulator films. These morphologies have been correlated with the defect morphologies of the recrystallized films. Stable cellular solidification fronts, which are obtained at low zone velocities if the radiation intensity gradient in the interfacial region is small, yield subboundary free films. We suggest that under these experimental conditions the interface morphology is primarily the result of radiative heating rather than constitutional supercooling.

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

Thermal Analysis of Zone‐Melting Recrystallization of Silicon‐on‐Insulator Structures with an Infrared Heat Source: An Overview

1992 ◽  
Vol 139 (9) ◽  
pp. 2687-2695 ◽  
Author(s):  
I. N. Miaoulis ◽  
P. Y. Wong ◽  
S. M. Yoon ◽  
R. D. Robinson ◽  
C. K. Hess
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Zone Melting ◽  
Silicon On Insulator

The Role of Oxygen in Zone-Melting Recrystallization of Silicon-On-Insulator Films

1983 ◽  
Vol 23 ◽  
Author(s):  
John C. C. Fan ◽  
B-Y. Tsaur ◽  
C. K. Chen ◽  
J. R. Dick ◽  
L. L. Kazmerski
Keyword(s):  
Dissolved Oxygen ◽  
Mass Spectroscopy ◽  
Zone Melting ◽  
Constitutional Supercooling ◽  
Common Origin ◽  
Silicon On Insulator ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTUsing secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

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