Growth of large areas of grain boundary-free silicon-on-insulator

1983 ◽  
Vol 19 (23) ◽  
pp. 985 ◽  
Author(s):  
J.P. Colinge ◽  
D. Bensahel ◽  
M. Alamome ◽  
M. Haond ◽  
J.C. Pfister
Keyword(s):  
Grain Boundary ◽  
Silicon On Insulator ◽  
Free Silicon

scholarly journals Release-free silicon-on-insulator cavity optomechanics

Optica ◽  
2017 ◽  
Vol 4 (9) ◽  
pp. 1147 ◽  
Author(s):  
Christopher J. Sarabalis ◽  
Yanni D. Dahmani ◽  
Rishi N. Patel ◽  
Jeff T. Hill ◽  
Amir H. Safavi-Naeini
Keyword(s):  
Silicon On Insulator ◽  
Cavity Optomechanics ◽  
Free Silicon

scholarly journals FSR-free silicon-on-insulator microring resonator based filter with bent contra-directional couplers

2016 ◽  
Vol 24 (25) ◽  
pp. 29009 ◽  
Author(s):  
Nourhan Eid ◽  
Robert Boeck ◽  
Hasitha Jayatilleka ◽  
Lukas Chrostowski ◽  
Wei Shi ◽  
...  
Keyword(s):  
Microring Resonator ◽  
Silicon On Insulator ◽  
Directional Couplers ◽  
Free Silicon

Grain Boundary Confinement in Soi Films Using Patterned Ar Coatings and Seeded Oscillatory Growth

1983 ◽  
Vol 23 ◽  
Author(s):  
C.I. Drowley ◽  
P. Zorabedian ◽  
T.I. Kamins
Keyword(s):  
Grain Boundary ◽  
Laser Beam ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Silicon On Insulator ◽  
Mos Transistors ◽  
Etch Pits ◽  
Polysilicon Films ◽  
Regular Arrays ◽  
Ar Coating

ABSTRACTRegular arrays of grain-boundary-free silicon strips several hundred microns long have been produced in a silicon-on-insulator (SOI) structure by using a patterned anti-reflection (AR) coating in combination with seeded oscillatory growth techniques. The AR coating pattern consists of a series of parallel stripes (typically 10 μm wide, separated by 10 μm spaces) starting from a seeding window. A laser beam (typically a 50 μm × 250 μm elliptical beam) is scanned perpendicular to the stripes, with the long axis of the beam parallel to the scan direction. The beam is stepped 1–2 μm between successive scans to advance the single crystal along the direction of the AR stripes. Grain boundaries are confined to the region under the AR stripes. Stereographic analysis of KOH etch pits formed in the single crystal strips has shown that the orientation of the stripes gradually rotates from (001)[110] to (013)[331] as the crystal propagates away from the seed. MOS transistors formed in the single-crystal strips have mobilities comparable to devices formed in bulk films. These mobilities are approximately 20% higher than those found in devices formed in large-grain recrystallized polysilicon films.

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