Extended growth of subgrain‐boundary‐free silicon‐on‐insulator via thermal gradient variation

1984 ◽  
Vol 44 (10) ◽  
pp. 959-961 ◽  
Author(s):  
El‐Hang Lee
Keyword(s):  
Thermal Gradient ◽  
Subgrain Boundary ◽  
Silicon On Insulator ◽  
Free Silicon ◽  
Gradient Variation

scholarly journals Release-free silicon-on-insulator cavity optomechanics

Optica ◽  
2017 ◽  
Vol 4 (9) ◽  
pp. 1147 ◽  
Author(s):  
Christopher J. Sarabalis ◽  
Yanni D. Dahmani ◽  
Rishi N. Patel ◽  
Jeff T. Hill ◽  
Amir H. Safavi-Naeini
Keyword(s):  
Silicon On Insulator ◽  
Cavity Optomechanics ◽  
Free Silicon

scholarly journals FSR-free silicon-on-insulator microring resonator based filter with bent contra-directional couplers

2016 ◽  
Vol 24 (25) ◽  
pp. 29009 ◽  
Author(s):  
Nourhan Eid ◽  
Robert Boeck ◽  
Hasitha Jayatilleka ◽  
Lukas Chrostowski ◽  
Wei Shi ◽  
...  
Keyword(s):  
Microring Resonator ◽  
Silicon On Insulator ◽  
Directional Couplers ◽  
Free Silicon

Elimination of Defects in Laser-Recrystallized SOI by Stress Relief

1987 ◽  
Vol 107 ◽  
Author(s):  
Andre Martinez ◽  
Ranjana Pandya ◽  
Emil Arnold
Keyword(s):  
Subgrain Boundary ◽  
Silicon Film ◽  
Large Degree ◽  
Stress Relief ◽  
Silicon On Insulator ◽  
Boundary Density ◽  
Density Of Dislocations ◽  
Low Viscosity ◽  
Degree Of Control ◽  
Zone Melt

AbstractWe report the application of a stress-relief technique aimed at reducing the density of dislocations and subgrain boundaries in laser-recrystallized Silicon-On-Insulator (SOI) material. By providing alternate mechanisms for relieving the stresses responsible for defect generation in the Si film, it is possible to exercise a large degree of control over the subgrain boundary density. Large areas of SOI material completely free of dislocations and subgrain boundaries have been obtained by inserting a low-viscosity layer under the silicon film and using an appropriately shaped cw laser beam as the heat source. During the process of zone-melt recrystallization this layer softens and provides an alternative stress relief mechanism, thus reducing the mechanical constraint on the growing crystal. Several examples of subgrain boundary control are described, which have resulted in crystalline regions in excess of 300 μm by several millimeters completely free of low-angle grain boundaries and dislocations.

Growth of large areas of grain boundary-free silicon-on-insulator

1983 ◽  
Vol 19 (23) ◽  
pp. 985 ◽  
Author(s):  
J.P. Colinge ◽  
D. Bensahel ◽  
M. Alamome ◽  
M. Haond ◽  
J.C. Pfister
Keyword(s):  
Grain Boundary ◽  
Silicon On Insulator ◽  
Free Silicon

scholarly journals Effect of the thermal gradient variation through geological time on basin modeling; a case study: The Paris basin

2005 ◽  
Vol 400 (1-4) ◽  
pp. 227-240 ◽  
Author(s):  
L. Amir ◽  
L. Martinez ◽  
J.R. Disnar ◽  
J.-L. Vigneresse ◽  
R. Michels ◽  
...  
Keyword(s):  
Thermal Gradient ◽  
Basin Modeling ◽  
Paris Basin ◽  
Geological Time ◽  
Gradient Variation
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