Large‐area defect‐free silicon‐on‐insulator films by zone‐melt recrystallization

1988 ◽  
Vol 52 (11) ◽  
pp. 901-903 ◽  
Author(s):  
R. Pandya ◽  
A. Martinez
Keyword(s):  
Silicon On Insulator ◽  
Large Area ◽  
Free Silicon ◽  
Zone Melt

Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

1990 ◽  
Vol 188 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Cross Section ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Non Destructive ◽  
Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

scholarly journals Large-Area Resonance-Tuned Metasurfaces for On-Demand Enhanced Spectroscopy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Masanobu Iwanaga ◽  
Bongseok Choi ◽  
Hideki T. Miyazaki ◽  
Yoshimasa Sugimoto ◽  
Kazuaki Sakoda
Keyword(s):  
Nanoimprint Lithography ◽  
Near Infrared ◽  
Cost Effective ◽  
Silicon On Insulator ◽  
Fine Tuning ◽  
Infrared Range ◽  
Large Area ◽  
Optical Resonance ◽  
Optical Resonances ◽  
Soi Substrates

We show an effective procedure for lateral structure tuning in nanoimprint lithography (NIL) that has been developed as a vertical top-down method fabricating large-area nanopatterns. The procedure was applied to optical resonance tuning in stacked complementary (SC) metasurfaces based on silicon-on-insulator (SOI) substrates and was found to realize structure tuning at nm precision using only one mold in the NIL process. The structure tuning enabled us to obtain fine tuning of the optical resonances, offering cost-effective, high-throughput, and high-precision nanofabrication. We also demonstrate that the tuned optical resonances selectively and significantly enhance fluorescence (FL) of dye molecules in a near-infrared range. FL intensity on a SC metasurface was found to be more than 450-fold larger than the FL intensity on flat Au film on base SOI substrate.

Viscoelastic Stress Relief in Patterned Silicon-on-Insulator Structures

1988 ◽  
Vol 130 ◽  
Author(s):  
Theodore J. Letavic ◽  
Edward W. Maby ◽  
Ronald J. Gutmann
Keyword(s):  
Mechanical Model ◽  
Silicon Film ◽  
Stress Relief ◽  
Silicon On Insulator ◽  
Viscoelastic Flow ◽  
Glass Layer ◽  
Flow Mechanism ◽  
Pattern Size ◽  
Phosphosilicate Glass ◽  
Zone Melt

AbstractA high-temperature viscoelastic stress relief technique has been investigated as a means for reducing in-plane stress encountered during zone-melt recrystallization of patterned silicon-on-insulator structures. This technique incorporates a phosphosilicate glass layer between the silicon film and the insulating substrate to provide a viscous flow mechanism for stress relief within the composite structure. The stress relaxation can bequalitatively described by a mechanical model which couples thermal expansion and viscoelastic flow. The model predicts the time constant for stress relief at high temperatures as a function of pattern size, and the results are useful as a design aid for zone-melt recrystallization experiments.

scholarly journals Release-free silicon-on-insulator cavity optomechanics

Optica ◽  
2017 ◽  
Vol 4 (9) ◽  
pp. 1147 ◽  
Author(s):  
Christopher J. Sarabalis ◽  
Yanni D. Dahmani ◽  
Rishi N. Patel ◽  
Jeff T. Hill ◽  
Amir H. Safavi-Naeini
Keyword(s):  
Silicon On Insulator ◽  
Cavity Optomechanics ◽  
Free Silicon
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