Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes

2003 ◽  
Vol 94 (3) ◽  
pp. 1819-1822 ◽  
Author(s):  
Yow-Jon Lin ◽  
Quantum Ker ◽  
Ching-Yao Ho ◽  
Hsing-Cheng Chang ◽  
Feng-Tso Chien
Keyword(s):  
Fermi Level ◽  
Schottky Diodes ◽  
Nitrogen Vacancy ◽  
Fermi Level Pinning

scholarly journals Role of Fermi-Level Pinning in Nanotube Schottky Diodes

2000 ◽  
Vol 84 (20) ◽  
pp. 4693-4696 ◽  
Author(s):  
François Léonard ◽  
J. Tersoff
Keyword(s):  
Fermi Level ◽  
Schottky Diodes ◽  
Fermi Level Pinning

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation

1997 ◽  
Vol 294 (1-2) ◽  
pp. 141-144 ◽  
Author(s):  
M Mamor ◽  
J.-L Perrossier ◽  
V Aubry-Fortuna ◽  
F Meyer ◽  
D Bouchier ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Diodes ◽  
Fermi Level Pinning

scholarly journals Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Micro ◽  
2021 ◽  
Vol 1 (2) ◽  
pp. 228-241
Author(s):  
Benjamin Richstein ◽  
Lena Hellmich ◽  
Joachim Knoch
Keyword(s):  
Silicon Nitride ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Nitride Layer ◽  
Interface Engineering ◽  
Fermi Level Pinning ◽  
Thin Silicon ◽  
Thermal Nitridation ◽  
Nitride Layers

Problems with doping in nanoscale devices or low temperature applications are widely known. Our approach to replace the degenerate doping in source/drain (S/D)-contacts is silicon nitride interface engineering. We measured Schottky diodes and MOSFETs with very thin silicon nitride layers in between silicon and metal. Al/SiN/p-Si diodes show Fermi level depinning with increasing SiN thickness. The diode fabricated with rapid thermal nitridation at 900 ∘C reaches the theoretical value of the Schottky barrier to the conduction band ΦSB,n=0.2 eV. As a result, the contact resistivity decreases and the ambipolar behavior can be suppressed. Schottky barrier MOSFETs with depinned S/D-contacts consisting of a thin silicon nitride layer and contact metals with different work functions are fabricated to demonstrate unipolar behavior. We presented n-type behavior with Al and p-type behavior with Co on samples which only distinguish by the contact metal. Thus, the thermally grown SiN layers are a useful method suppress Fermi level pinning and enable reconfigurable contacts by choosing an appropriate metal.

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial
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