Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1−xGex layers

1999 ◽  
Vol 86 (12) ◽  
pp. 6890-6894 ◽  
Author(s):  
M. Mamor ◽  
O. Nur ◽  
M. Karlsteen ◽  
M. Willander ◽  
F. D. Auret
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Fermi Level Pinning ◽  
Barrier Heights

Passivation of Surface and Bulk Defects in InP

1992 ◽  
Vol 262 ◽  
Author(s):  
Sathya Balasubramanian ◽  
Vikram Kumar ◽  
N. Balasubramanian ◽  
V. Premachandran
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Depth Profile ◽  
Hydrogen Plasma ◽  
Deep Levels ◽  
Fermi Level Position ◽  
Surface Fermi Level

ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs(110) FROM THE LOW TO THE HIGH COVERAGE REGIME

1994 ◽  
Vol 01 (04) ◽  
pp. 429-433 ◽  
Author(s):  
MARTINA HEINEMANN
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Barriers ◽  
High Coverage ◽  
Large Group ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces ◽  
First Time

The large group of rectifying metal-semiconductor interfaces is better known under the name Schottky barriers or contacts. Their rectifying behavior has been reported for the first time by Braun in 1874 but the understanding of the actual physics at such interfaces is still not complete. This paper summarizes the development of models and shows how modern calculational methods can contribute to a better understanding of Schottky barriers.

Schottky Barrier Heights of PT Silicides on SiGe

1993 ◽  
Vol 320 ◽  
Author(s):  
J.R. Jimenez ◽  
X. Xiao ◽  
J.C. Sturm ◽  
P.W. Pellegrini ◽  
M. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Infrared Detector ◽  
Schottky Barriers ◽  
Band Offset ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Metal Thickness ◽  
Deposited Metal

ABSTRACTSilicide/SiGe Schottky barriers are of importance for applications in infrared detectors and SiGe contacts, as well as for fundamental studies of metal-semiconductor interfaces. We have fabricated silicide/SiGe Schottky diodes by the reaction of evaporated Pt and Ir films on p-SiGe alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. The Schottky barrier heights were determined from internal photoemission. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights that are higher than the corresponding silicide/p-Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower “barrier heights” that decrease with increasing Ge concentration. The smaller barrier heights in such silicide/Si/SiGe diodes are due to tunneling through the unconsumed Si layer. Equations are derived accounting for this tunneling contribution, and lead to an extracted “barrier height” that is the Si barrier height reduced by the Si/SiGe band offset. Highly bias-tunable barrier heights are obtained (e.g. 0.30 eV to 0.12 eV) by allowing the SiGe/Si band offset to extend higher in energy than the Schottky barrier, leading to a cut-off-wavelength-tunable silicide/SiGe/Si Schottky diode infrared detector.

Schottky Barrier Modification Of Low Energy Ar-Ion Bombarded GaAs And Si

1998 ◽  
Vol 510 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
F.D. Auret ◽  
S.A. Goodman
Keyword(s):  
Schottky Barrier ◽  
Schottky Diodes ◽  
Surface States ◽  
Barrier Properties ◽  
Low Energy ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Current Voltage ◽  
Donor Type ◽  
High Concentrations

AbstractEpitaxially grown GaAs (p- and n-type) and n-Si were bombarded with low energy Ar-ions. Current voltage measurements on Schottky barrier diodes fabricated on the sputtered p-GaAs (Sc) and n-Si (Pd) showed that the series resistance and ideality factor were increased as the Arion dose was increased. The respective increase and decrease in barrier heights of Sc/p-GaAs and Pd/n-Si diodes were attributed to the presence of donor-type surface states in the bombarded material. The barrier heights of Au Schottky diodes made on n-GaAs changed nonmonotonically with Ar-ion sputter voltage. Variations of barrier height in the 0-1 kV range were explained by the introduction of donor-type defects. We demonstrated that the introduction of high concentrations of continuous level defects above 1 kV resulted in Fermi level pinning to become the dominant mechanism for controlling the effective barrier of current transport. Our results have shown that Schottky barrier properties could be changed by controlled amounts by varying the bombarding ion dose or sputter voltage.

scholarly journals Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Micro ◽  
2021 ◽  
Vol 1 (2) ◽  
pp. 228-241
Author(s):  
Benjamin Richstein ◽  
Lena Hellmich ◽  
Joachim Knoch
Keyword(s):  
Silicon Nitride ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Nitride Layer ◽  
Interface Engineering ◽  
Fermi Level Pinning ◽  
Thin Silicon ◽  
Thermal Nitridation ◽  
Nitride Layers

Problems with doping in nanoscale devices or low temperature applications are widely known. Our approach to replace the degenerate doping in source/drain (S/D)-contacts is silicon nitride interface engineering. We measured Schottky diodes and MOSFETs with very thin silicon nitride layers in between silicon and metal. Al/SiN/p-Si diodes show Fermi level depinning with increasing SiN thickness. The diode fabricated with rapid thermal nitridation at 900 ∘C reaches the theoretical value of the Schottky barrier to the conduction band ΦSB,n=0.2 eV. As a result, the contact resistivity decreases and the ambipolar behavior can be suppressed. Schottky barrier MOSFETs with depinned S/D-contacts consisting of a thin silicon nitride layer and contact metals with different work functions are fabricated to demonstrate unipolar behavior. We presented n-type behavior with Al and p-type behavior with Co on samples which only distinguish by the contact metal. Thus, the thermally grown SiN layers are a useful method suppress Fermi level pinning and enable reconfigurable contacts by choosing an appropriate metal.

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes

2003 ◽  
Vol 94 (3) ◽  
pp. 1819-1822 ◽  
Author(s):  
Yow-Jon Lin ◽  
Quantum Ker ◽  
Ching-Yao Ho ◽  
Hsing-Cheng Chang ◽  
Feng-Tso Chien
Keyword(s):  
Fermi Level ◽  
Schottky Diodes ◽  
Nitrogen Vacancy ◽  
Fermi Level Pinning

Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

1993 ◽  
Vol 36 (10) ◽  
pp. 1371-1373 ◽  
Author(s):  
A.Y. Polyakov ◽  
A.G. Milnes ◽  
N.B. Smirnov ◽  
L.V. Druzhinina ◽  
I.V. Tunitskaya
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Fermi Level Pinning

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Sign in / Sign up

Export Citation Format

Share Document