scholarly journals Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method

2012 ◽  
Vol 101 (12) ◽  
pp. 122102 ◽  
Author(s):  
Toshiyuki Yoshida ◽  
Tamotsu Hashizume
Keyword(s):  
Atomic Layer Deposition ◽  
Formation Mechanism ◽  
Atomic Layer ◽  
Air Gap ◽  
Interface Formation ◽  
Layer Deposition ◽  
Capacitance Voltage

Formation Mechanism and Photoelectric Properties of Al2O3 Film based on Atomic Layer Deposition

2021 ◽  
pp. 151419
Author(s):  
Bin Wei ◽  
Huimin Chen ◽  
Wenqiang Hua ◽  
Minyu Chen ◽  
Xingwei Ding ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Formation Mechanism ◽  
Atomic Layer ◽  
Al2o3 Film ◽  
Photoelectric Properties ◽  
Layer Deposition

Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

2015 ◽  
Vol 1088 ◽  
pp. 107-111
Author(s):  
Jian Shuang Liu ◽  
Fang Fang Zhu ◽  
Fei Lu ◽  
Lin Zhang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Flat Band ◽  
Interface Reactions ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A plasma enhanced atomic layer deposition process has been demonstrated for Lanthanum oxide films using La (thd)3 precursor and oxygen plasma. The chemical and electrical properties of La2O3 ultra-thin films on Si (100) substrates before and after post-annealing in N2 ambient have been investigated. X-ray photoelectron spectroscopic revealed that interface reactions take place after annealing process which lead to oxygen insufficiency, as well as the balance band offset decreases with the increase of annealing temperature. The capacitance-voltage and current-voltage characteristics show La2O3 capacitors annealed at 900 °C have negligible hysteresis, smaller interface trap density in comparison with as-deposited samples, but larger flat band voltage and higher gate-leakage current density due to the appearance of oxygen vacancy in the La2O3 films.

Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

2005 ◽  
Vol 483-485 ◽  
pp. 701-704 ◽  
Author(s):  
Maciej Wolborski ◽  
Mietek Bakowski ◽  
Viljami Pore ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Oxides ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Capacitance Voltage ◽  
P Type ◽  
Titanium Oxide Films

Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.

scholarly journals Влияние ростовой температуры на пассивирующие свойства пленок Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, выращенных методом атомно-слоевого осаждения на поверхности CdHgTe

2020 ◽  
Vol 46 (15) ◽  
pp. 14
Author(s):  
Д.В. Горшков ◽  
Г.Ю. Сидоров ◽  
И.В. Сабинина ◽  
Ю.Г. Сидоров ◽  
Д.В. Марин ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Interface Properties ◽  
Optimum Growth ◽  
Al2o3 Coating ◽  
Optimum Growth Temperature ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mis Structures

The electrophysical interface properties of the passivating Al2O3 coating grown by the method of plasma-induced atomic layer deposition at various temperatures on MBE p-CdHgTe (x = 0.22) was experimentally studied by measuring the capacitance-voltage characteristics of MIS structures. It was found that, at a temperature of Al2O3 growth of 200 °С in MCT, the concentration of acceptors increases due to dissociation. At a temperature of 80 °С, the spread in the capacitance of the dielectric and the built-in charge increases. The optimum growth temperature of the passivating Al2O3coating on CdHgTe lies in the range of 120-160 °С.

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 685-688 ◽  
Author(s):  
Emanuela Schilirò ◽  
Salvatore di Franco ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Hassan Gargouri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Thermally Grown

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films, both with and without the presence of a thin SiO2 layer, thermally grown on the 4H-SiC before ALD. Capacitance-voltage measurements on MOS structures resulted in a higher dielectric constant (ε~8.4) for the Al2O3/SiO2/SiC stack, with respect to that of the Al2O3/SiC sample (ε~ 6.7). Moreover, C<em>urrent density-Electric Field</em> measurements demonstrated a reduction of the leakage current and an improvement of the breakdown behaviour in the presence of the interfacial thermally grown SiO2. Basing on these preliminary results, possible applications of ALD-Al2O3 as gate insulator in 4H-SiC MOSFETs can be envisaged.

Sign in / Sign up

Export Citation Format

Share Document