Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling

2003 ◽  
Vol 93 (2) ◽  
pp. 1099-1107 ◽  
Author(s):  
M. Hjelm ◽  
H-E. Nilsson ◽  
A. Martinez ◽  
K. F. Brennan ◽  
E. Bellotti
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Band To Band Tunneling

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

2000 ◽  
Vol 338-342 ◽  
pp. 765-768 ◽  
Author(s):  
H.-E. Nilsson ◽  
E. Bellotti ◽  
K.F. Brennan ◽  
M. Hjelm
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Full Band

Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

Monte Carlo study of photogenerated carrier transport in GaAs surface space‐charge fields

1989 ◽  
Vol 66 (7) ◽  
pp. 3066-3073 ◽  
Author(s):  
Xing Zhou ◽  
Thomas Y. Hsiang ◽  
R. J. Dwayne Miller
Keyword(s):  
Monte Carlo ◽  
Space Charge ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Gaas Surface ◽  
Photogenerated Carrier

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

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