Self‐consistent Monte Carlo study of high‐field carrier transport in graded heterostructures

1987 ◽  
Vol 62 (9) ◽  
pp. 3825-3835 ◽  
Author(s):  
A. Al‐Omar ◽  
J. P. Krusius
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Self Consistent

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

2000 ◽  
Vol 338-342 ◽  
pp. 765-768 ◽  
Author(s):  
H.-E. Nilsson ◽  
E. Bellotti ◽  
K.F. Brennan ◽  
M. Hjelm
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Full Band

Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling

2003 ◽  
Vol 93 (2) ◽  
pp. 1099-1107 ◽  
Author(s):  
M. Hjelm ◽  
H-E. Nilsson ◽  
A. Martinez ◽  
K. F. Brennan ◽  
E. Bellotti
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Band To Band Tunneling

Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

Monte Carlo study of photogenerated carrier transport in GaAs surface space‐charge fields

1989 ◽  
Vol 66 (7) ◽  
pp. 3066-3073 ◽  
Author(s):  
Xing Zhou ◽  
Thomas Y. Hsiang ◽  
R. J. Dwayne Miller
Keyword(s):  
Monte Carlo ◽  
Space Charge ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Gaas Surface ◽  
Photogenerated Carrier

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

scholarly journals A Monte Carlo Study of Gamma-Ray Pulsars in the Gould Belt

2004 ◽  
Vol 218 ◽  
pp. 419-420
Author(s):  
P. Leung ◽  
K. S. Cheng ◽  
L. Zhang ◽  
Z. J. Jiang
Keyword(s):  
Monte Carlo ◽  
Gamma Ray ◽  
Monte Carlo Study ◽  
Gap Model ◽  
Radio Pulsars ◽  
Gould Belt ◽  
Monte Carlo Techniques ◽  
Magnetic Inclination ◽  
Self Consistent ◽  
Initial Magnetic Field

We use Monte Carlo techniques to simulate the statistical properties of rotation-powered pulsars in the Gould Belt. The gamma-ray properties of these pulsars are calculated by using a self-consistent outer gap model and other pulsar properties, i.e., initial magnetic field and period, and velocity distribution of the neutrons stars at birth, are obtained from the statistics of radio pulsars. We obtain distributions of the magnetic inclination angle, period, distance and age for these gamma-ray pulsars in the Gould Belt.

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