Comment on “Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures” [Appl. Phys. Lett. 80, 3952 (2002)]

Per Lundgren; Einar Ö. Sveinbjörnsson; Halldor Ö. Olafsson

doi:10.1063/1.1519330

Comment on “Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures” [Appl. Phys. Lett. 80, 3952 (2002)]

Applied Physics Letters ◽

10.1063/1.1519330 ◽

2002 ◽

Vol 81 (19) ◽

pp. 3681-3682 ◽

Cited By ~ 1

Author(s):

Per Lundgren ◽

Einar Ö. Sveinbjörnsson ◽

Halldor Ö. Olafsson

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

Download Full-text

Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1481194 ◽

2002 ◽

Vol 80 (21) ◽

pp. 3952-3954 ◽

Cited By ~ 9

Author(s):

Quazi Deen Mohd Khosru ◽

Anri Nakajima ◽

Takashi Yoshimoto ◽

Shin Yokoyama

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

Download Full-text

Response to “Comment on ‘Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures’ ” [Appl. Phys. Lett. 81, 3681 (2002)]

Applied Physics Letters ◽

10.1063/1.1519331 ◽

2002 ◽

Vol 81 (19) ◽

pp. 3683-3684 ◽

Cited By ~ 2

Author(s):

Quazi Deen Mohd Khosru ◽

Anri Nakajima ◽

Takashi Yoshimoto ◽

Shin Yokoyama

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

Download Full-text

Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Applied Physics Letters ◽

10.1063/1.2976632 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083510 ◽

Cited By ~ 9

Author(s):

Ruilong Xie ◽

Nan Wu ◽

Chen Shen ◽

Chunxiang Zhu

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

Download Full-text

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures

Applied Physics Express ◽

10.1143/apex.2.021201 ◽

2009 ◽

Vol 2 ◽

pp. 021201 ◽

Cited By ~ 9

Author(s):

Dai Okamoto ◽

Hiroshi Yano ◽

Yuki Oshiro ◽

Tomoaki Hatayama ◽

Yukiharu Uraoka ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Direct Oxidation ◽

Semiconductor Structures

Download Full-text

Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals

Microelectronics Reliability ◽

10.1016/j.microrel.2017.09.010 ◽

2017 ◽

Vol 78 ◽

pp. 227-232 ◽

Cited By ~ 3

Author(s):

S. Chatbouri ◽

M. Troudi ◽

A. Kalboussi ◽

A. Souifi

Keyword(s):

Metal Oxide ◽

Charge Transport ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Transport Mechanisms ◽

Semiconductor Structures ◽

Traps Effect

Download Full-text

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Materials Science and Engineering B ◽

10.1016/s0921-5107(97)00034-2 ◽

1997 ◽

Vol 47 (3) ◽

pp. 218-223

Author(s):

M. Yoshikawa ◽

N. Nemoto ◽

H. Itoh ◽

I. Nashiyama ◽

H. Okumura ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

Download Full-text

The effects of a hydrogen ambient on the interface state energy distribution of gamma irradiated and charge injected metal‐oxide‐semiconductor structures fabricated on germanium/boron doped silicon

Journal of Applied Physics ◽

10.1063/1.349815 ◽

1991 ◽

Vol 70 (11) ◽

pp. 6902-6907 ◽

Cited By ~ 4

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan ◽

L. West

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

State Energy ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon ◽

Gamma Irradiated

Download Full-text

Interface traps contribution on transport mechanisms under illumination in metal–oxide–semiconductor structures based on silicon nanocrystals

Applied Physics A ◽

10.1007/s00339-017-1533-x ◽

2018 ◽

Vol 124 (2) ◽

Author(s):

S. Chatbouri ◽

M. Troudi ◽

A. Kalboussi ◽

A. Souifi

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Transport Mechanisms ◽

Semiconductor Structures

Download Full-text

Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

Download Full-text

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Journal of Applied Physics ◽

10.1063/5.0037744 ◽

2021 ◽

Vol 129 (5) ◽

pp. 054501

Author(s):

Jordan R. Nicholls ◽

Arnar M. Vidarsson ◽

Daniel Haasmann ◽

Einar Ö. Sveinbjörnsson ◽

Sima Dimitrijev

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

Download Full-text