Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors

Jung-Hoon Rhew; Mark S. Lundstrom

doi:10.1063/1.1509098

Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.1509098 ◽

2002 ◽

Vol 92 (9) ◽

pp. 5196-5202 ◽

Cited By ~ 42

Author(s):

Jung-Hoon Rhew ◽

Mark S. Lundstrom

Keyword(s):

Diffusion Equation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion

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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Cited By ~ 64

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Simulation of Ultrathin Body Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4987 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 4987-4991

Author(s):

Eiichi Sano

Keyword(s):

Metal Oxide ◽

Diffusion Model ◽

Effective Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Drift Diffusion Model ◽

Drift Diffusion

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Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2283 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2283-L2285 ◽

Cited By ~ 4

Author(s):

Hans Kosina ◽

Siegfried Selberherr

Keyword(s):

Monte Carlo ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Diffusion Method ◽

Drift Diffusion

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.010110 ◽

2011 ◽

Vol 50 ◽

pp. 010110 ◽

Cited By ~ 3

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Drive Current

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Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4933287 ◽

2015 ◽

Vol 118 (15) ◽

pp. 155105 ◽

Cited By ~ 2

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Physical Review Applied ◽

10.1103/physrevapplied.13.044066 ◽

2020 ◽

Vol 13 (4) ◽

Cited By ~ 9

Author(s):

Wenhan Zhou ◽

Shengli Zhang ◽

Shiying Guo ◽

Yangyang Wang ◽

Jing Lu ◽

...

Keyword(s):

Metal Oxide ◽

Effective Mass ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional

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Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

Applied Physics Express ◽

10.7567/apex.6.034301 ◽

2013 ◽

Vol 6 (3) ◽

pp. 034301 ◽

Cited By ~ 6

Author(s):

Kenta Shimoida ◽

Hideaki Tsuchiya ◽

Yoshinari Kamakura ◽

Nobuya Mori ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.1406980 ◽

2001 ◽

Vol 79 (14) ◽

pp. 2267-2269 ◽

Cited By ~ 27

Author(s):

Nobuyuki Sano ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion ◽

Random Dopant

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Two-dimensional drift-diffusion simulation of superficial strained-Si/Si[sub 1−x]Ge[sub x] channel metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589935 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1538

Author(s):

J. B. Roldán

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Drift Diffusion ◽

Strained Si ◽

Diffusion Simulation

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.010110 ◽

2011 ◽

Vol 50 (1R) ◽

pp. 010110 ◽

Cited By ~ 4

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Drive Current

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