Two-dimensional drift-diffusion simulation of superficial strained-Si/Si[sub 1−x]Ge[sub x] channel metal-oxide-semiconductor field-effect transistors

J. B. Roldán

doi:10.1116/1.589935

Two-dimensional drift-diffusion simulation of superficial strained-Si/Si[sub 1−x]Ge[sub x] channel metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589935 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1538

Author(s):

J. B. Roldán

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Drift Diffusion ◽

Strained Si ◽

Diffusion Simulation

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A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.6346 ◽

2003 ◽

Vol 42 (Part 1, No. 10) ◽

pp. 6346-6353 ◽

Cited By ~ 3

Author(s):

Eiichi Sano

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion ◽

Strained Si ◽

Theoretical Comparison

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

Applied Physics Letters ◽

10.1063/1.4940685 ◽

2016 ◽

Vol 108 (4) ◽

pp. 043504 ◽

Cited By ~ 2

Author(s):

Anh Khoa Augustin Lu ◽

Geoffrey Pourtois ◽

Tarun Agarwal ◽

Aryan Afzalian ◽

Iuliana P. Radu ◽

...

Keyword(s):

Metal Oxide ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

First Principles Study

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Simulation of Ultrathin Body Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4987 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 4987-4991

Author(s):

Eiichi Sano

Keyword(s):

Metal Oxide ◽

Diffusion Model ◽

Effective Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Drift Diffusion Model ◽

Drift Diffusion

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Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.362953 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1567-1577 ◽

Cited By ~ 381

Author(s):

Shin‐ichi Takagi ◽

Judy L. Hoyt ◽

Jeffrey J. Welser ◽

James F. Gibbons

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Limited Mobility

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Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/3/306 ◽

2001 ◽

Vol 16 (3) ◽

pp. 155-159 ◽

Cited By ~ 8

Author(s):

Nobuyuki Sugii ◽

Shinya Yamaguchi ◽

Kiyokazu Nakagawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2283 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2283-L2285 ◽

Cited By ~ 4

Author(s):

Hans Kosina ◽

Siegfried Selberherr

Keyword(s):

Monte Carlo ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Diffusion Method ◽

Drift Diffusion

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Two-dimensional dopant profile of 0.2 μm metal–oxide–semiconductor field effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591232 ◽

2000 ◽

Vol 18 (1) ◽

pp. 560 ◽

Cited By ~ 4

Author(s):

X.-D. Wang ◽

R. Mahaffy ◽

K. Tan ◽

C. K. Shih ◽

J. J. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Dopant Profile

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