Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

Kenta Shimoida; Hideaki Tsuchiya; Yoshinari Kamakura; Nobuya Mori; Matsuto Ogawa

doi:10.7567/apex.6.034301

Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

Applied Physics Express ◽

10.7567/apex.6.034301 ◽

2013 ◽

Vol 6 (3) ◽

pp. 034301 ◽

Cited By ~ 6

Author(s):

Kenta Shimoida ◽

Hideaki Tsuchiya ◽

Yoshinari Kamakura ◽

Nobuya Mori ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4866872 ◽

2014 ◽

Vol 115 (8) ◽

pp. 084506 ◽

Cited By ~ 45

Author(s):

Jiwon Chang ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Transition Metal ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transition Metal Dichalcogenide ◽

Ballistic Performance

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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Cited By ~ 64

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2668 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2668-2671 ◽

Cited By ~ 6

Author(s):

Rihito Kuroda ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Accumulation Mode

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.010110 ◽

2011 ◽

Vol 50 ◽

pp. 010110 ◽

Cited By ~ 3

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Drive Current

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Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4933287 ◽

2015 ◽

Vol 118 (15) ◽

pp. 155105 ◽

Cited By ~ 2

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Physical Review Applied ◽

10.1103/physrevapplied.13.044066 ◽

2020 ◽

Vol 13 (4) ◽

Cited By ~ 9

Author(s):

Wenhan Zhou ◽

Shengli Zhang ◽

Shiying Guo ◽

Yangyang Wang ◽

Jing Lu ◽

...

Keyword(s):

Metal Oxide ◽

Effective Mass ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.010110 ◽

2011 ◽

Vol 50 (1R) ◽

pp. 010110 ◽

Cited By ~ 4

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Drive Current

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Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.1509098 ◽

2002 ◽

Vol 92 (9) ◽

pp. 5196-5202 ◽

Cited By ~ 42

Author(s):

Jung-Hoon Rhew ◽

Mark S. Lundstrom

Keyword(s):

Diffusion Equation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion

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New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6463 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6463-6470 ◽

Cited By ~ 11

Author(s):

Kenji Natori ◽

Naoya Wada ◽

Takashi Kurusu

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Simulation Technique ◽

Oxide Semiconductor ◽

Monte Carlo Simulation Technique

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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