Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional 
BiN

Wenhan Zhou; Shengli Zhang; Shiying Guo; Yangyang Wang; Jing Lu; Xing Ming; Zhi Li; Hengze Qu; Haibo Zeng

doi:10.1103/physrevapplied.13.044066

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Physical Review Applied ◽

10.1103/physrevapplied.13.044066 ◽

2020 ◽

Vol 13 (4) ◽

Cited By ~ 9

Author(s):

Wenhan Zhou ◽

Shengli Zhang ◽

Shiying Guo ◽

Yangyang Wang ◽

Jing Lu ◽

...

Keyword(s):

Metal Oxide ◽

Effective Mass ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional

Download Full-text

Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Cited By ~ 64

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

Download Full-text

Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

Applied Physics Letters ◽

10.1063/1.4940685 ◽

2016 ◽

Vol 108 (4) ◽

pp. 043504 ◽

Cited By ~ 2

Author(s):

Anh Khoa Augustin Lu ◽

Geoffrey Pourtois ◽

Tarun Agarwal ◽

Aryan Afzalian ◽

Iuliana P. Radu ◽

...

Keyword(s):

Metal Oxide ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

First Principles Study

Download Full-text

Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.362953 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1567-1577 ◽

Cited By ~ 381

Author(s):

Shin‐ichi Takagi ◽

Judy L. Hoyt ◽

Jeffrey J. Welser ◽

James F. Gibbons

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Limited Mobility

Download Full-text

Two-dimensional dopant profile of 0.2 μm metal–oxide–semiconductor field effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591232 ◽

2000 ◽

Vol 18 (1) ◽

pp. 560 ◽

Cited By ~ 4

Author(s):

X.-D. Wang ◽

R. Mahaffy ◽

K. Tan ◽

C. K. Shih ◽

J. J. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Dopant Profile

Download Full-text

Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.010110 ◽

2011 ◽

Vol 50 ◽

pp. 010110 ◽

Cited By ~ 3

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Drive Current

Download Full-text

Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1627792 ◽

2004 ◽

Vol 22 (1) ◽

pp. 358 ◽

Cited By ~ 14

Author(s):

Hidenobu Fukutome ◽

Hiroshi Arimoto ◽

Shigehiko Hasegawa ◽

Hisao Nakashima

Keyword(s):

Metal Oxide ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscopy

Download Full-text

Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4933287 ◽

2015 ◽

Vol 118 (15) ◽

pp. 155105 ◽

Cited By ~ 2

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

Applied Physics Express ◽

10.7567/apex.6.034301 ◽

2013 ◽

Vol 6 (3) ◽

pp. 034301 ◽

Cited By ~ 6

Author(s):

Kenta Shimoida ◽

Hideaki Tsuchiya ◽

Yoshinari Kamakura ◽

Nobuya Mori ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2908442 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1628 ◽

Cited By ~ 2

Author(s):

Raseong Kim ◽

Neophytos Neophytou ◽

Abhijeet Paul ◽

Gerhard Klimeck ◽

Mark S. Lundstrom

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

One Dimensional

Download Full-text