Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

2013 ◽  
Author(s):  
T. Ohshima ◽  
M. Deki ◽  
T. Makino ◽  
N. Iwamoto ◽  
S. Onoda ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Breakdown Voltage ◽  
Semiconductor Devices ◽  
Ion Beams ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 943-946
Author(s):  
Yuichiro Nanen ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Field ◽  
Reduced Surface

Characteristics of high-voltage lateral silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with various reduced surface field (RESURF) structures were simulated. Breakdown voltage was enhanced from 5300 V for single-zone RESURF to 7400 V for two-zone, and to 7600 V for quasi-modulated RESURF MOSFETs.

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