Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

2002 ◽  
Vol 80 (14) ◽  
pp. 2463-2465 ◽  
Author(s):  
P. Danesh ◽  
B. Pantchev ◽  
D. Grambole ◽  
B. Schmidt
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Influence of film thickness on optical and electrical properties of hydrogenated amorphous silicon

1987 ◽  
Vol 150 (1) ◽  
pp. 1-9 ◽  
Author(s):  
F. Demichelis ◽  
G. Kaniadakis ◽  
E. Mezzetti ◽  
P. Mpawenayo ◽  
A. Tagliaferro ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optical And Electrical Properties ◽  
Hydrogenated Amorphous

scholarly journals Growth of Hydrogenated Amorphous Silicon (A-Si:H) on Patterned Substrates for Increased Mechanical Stability

1994 ◽  
Vol 356 ◽  
Author(s):  
Wan-Shick Hong ◽  
J. C. Delgado ◽  
O. Ruiz ◽  
V. Perez-Mendez
Keyword(s):  
Residual Stress ◽  
Computer Simulation ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Mechanical Stability ◽  
Hydrogenated Amorphous Silicon ◽  
Lateral Dimension ◽  
Dimensional Array ◽  
Pyramid Structure ◽  
Hydrogenated Amorphous

AbstractResidual stress in hydrogenated amorphous silicon (a-Si:H) film has been studied. Deposition on square island pattern reduced the stress when the lateral dimension of the islands became comparable to the film thickness. The overall stress was reduced by approximately 40% when the lateral dimension was decreased to 40 μm, but the adhesion was not improved much. However, substrates having a 2-dimensional array of inversed pyramids of 200 μm in lateral dimension produced overall stress 3∼4 times lower than that on the normal substrates. The inversed pyramid structure also had other advantages including minimized delamination and increased effective thickness. Computer simulation confirmed that the overall stress can be reduced by deposition on the pyramidal structure.

Systematic Errors in the Analysis of the Infrared Transmission Data Of Hydrogenated Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Maley ◽  
I. Szafranek
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Hydrogenated Amorphous Silicon ◽  
Simulated Data ◽  
Infrared Transmission ◽  
Si Substrate ◽  
Simple Method ◽  
Transmission Data ◽  
Hydrogenated Amorphous

ABSTRACTThe validity of the Brodsky, Cardona and Cuomo (BCC) [1] and the Connell and Lewis (CL) [2] methods to analyze infrared transmission data of hydrogenated amorphous silicon (a-Si:H) was examined using computer simulations. Transmission spectra for a-Si:H films 0-5¼m thick and containing up to 30 atomic% hydrogen were simulated assuming coherent reflections in the film and incoherent reflections in the c-Si substrate. Analysis of the simulated data for the 640cm−1 Si-H wagging mode shows that the BCC and CL techniques systematically overestimate the absorption coefficeint, α, and hence hydrogen content, CH, when the film thickness, d, is less than ∼l¼m. The error is nearly independent of CH and is as large as 80% in the limit d→0. On this basis, previously reported experimental evidence for the dependence of CH on d is shown to be an analysis artifact. A simple method to correct the hydrogen content determined by the BCC or CL analysis using only the film thickness is presented.

The Effect of Hydrogenated Amorphous Silicon on the Formation Rate Kinetics and Crystallography of Palladium Slicide Films

1991 ◽  
Vol 238 ◽  
Author(s):  
N. R. Manning ◽  
Haydn Chen ◽  
J. R. Abelson ◽  
L. H. Allen
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Formation Rate ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Before And After ◽  
Rate Kinetics ◽  
Hydrogenated Amorphous

ABSTRACTSamples of crystalline (111) silicon were coated with various thicknesses of hydrogenated amorphous silicon (a-Si:H), then coated with 100 nm of palladium. These samples were then reacted to form Pd2Si in vacuum. The activation energies and reaction prefactors were determined by monitoring the film thickness using x-ray diffraction and by 4-point resistivity measurements. The crystallographic texture of the metal overlayer and suicide films were investigated before and after the reaction.

Growth and Nucleation of Hydrogenated Amorphous Silicon on Silicon (100) Surfaces

1995 ◽  
Vol 377 ◽  
Author(s):  
D. M. Tanenbaum ◽  
A. Laracuente ◽  
A. C. Gallagher
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Correlation Length ◽  
Hydrogenated Amorphous Silicon ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Dynamic Scaling ◽  
Initial Growth ◽  
Air Exposure ◽  
Hydrogenated Amorphous

ABSTRACTA scanning tunneling microscope (STM) has been used to study the topology of the surfaces of a series of thin hydrogenated amorphous silicon (a-Si:H) films deposited by rf discharge from pure silane. The substrates were atomically flat, oxide-free, single-crystal Si (100). Films were grown in our laboratory and transferred to the STM with no air exposure between growth and measurement. A series of thin films between 1 and 50 nm in thickness reveals the initial growth stage of a-Si:H on Si (100). Initial nucleation and islanding can be seen on these films. The surface has a distribution of island sizes. The rms roughness and a surface lateral correlation length were measured as functions of film thickness. The rms roughness grows sublinearly with thickness from 0.3–0.5 nm as the film thickness is raised from 1 to 50 nm. The lateral size of the surface features also grows with film thickness. The growth of the roughness and correlation length can be compared with the dynamic scaling model. In addition, the topographs reveal occasional structures of larger size and low density on the film surface. These structures are nanoparticles of silicon deposited from the plasma during film growth. The frequency of these features scales with film thickness, and represents 10−510−4 of the total film volume.

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