The Effect of Hydrogenated Amorphous Silicon on the Formation Rate Kinetics and Crystallography of Palladium Slicide Films

1991 ◽  
Vol 238 ◽  
Author(s):  
N. R. Manning ◽  
Haydn Chen ◽  
J. R. Abelson ◽  
L. H. Allen
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Formation Rate ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Before And After ◽  
Rate Kinetics ◽  
Hydrogenated Amorphous

ABSTRACTSamples of crystalline (111) silicon were coated with various thicknesses of hydrogenated amorphous silicon (a-Si:H), then coated with 100 nm of palladium. These samples were then reacted to form Pd2Si in vacuum. The activation energies and reaction prefactors were determined by monitoring the film thickness using x-ray diffraction and by 4-point resistivity measurements. The crystallographic texture of the metal overlayer and suicide films were investigated before and after the reaction.

Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

1999 ◽  
Vol 75 (21) ◽  
pp. 3282-3284 ◽  
Author(s):  
Kin Man Yu ◽  
W. Walukiewicz ◽  
S. Muto ◽  
H.-C. Jin ◽  
J. R. Abelson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
Local Structures ◽  
Before And After ◽  
Hydrogenated Amorphous

Stress in hydrogenated amorphous silicon determined by X-ray diffraction

2003 ◽  
Vol 430 (1-2) ◽  
pp. 153-156 ◽  
Author(s):  
M. Härting ◽  
S. Woodford ◽  
D. Knoesen ◽  
R. Bucher ◽  
D.T. Britton
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hydrogenated Amorphous

Reaction Rate Kinetics and Film Textures of Palladium Silicide Formed on Hydrogenated Amorphous Silicon

1993 ◽  
Vol 311 ◽  
Author(s):  
N. R. Manning ◽  
Haydn Chen ◽  
J. R. Abelson ◽  
L. H. Allen
Keyword(s):  
Reaction Rate ◽  
Isothermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Rate Kinetics ◽  
Palladium Silicide ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

ABSTRACTThe reaction rate kinetics of the thin film solid-state reaction between 120 nm of Pd and 100 or 300 nm of a-Si:H(18at%) to form Pd2Si were studied in situ using x-ray diffraction and four-point probe resistivity measurements during isothermal annealing. These two techniques yielded activation energies and prefactors of Ea=1. 36±:0.11 eV with ko=4.29 cm2/sec for the x-ray diffraction experiments; and Ea=0.97±0.22 eV with ko=3.42x10-4 cm2/sec for the resistivity measurements. The activation energy and prefactor obtained from the c-Si substrate of the resistivity measurements yielded Ea=l.41±0.31 eV and ko=10.6 cm2/sec. Comparisons showed that the silicide formed from the a-Si:H reacted approximately 1.4 times faster than the silicide formed from the c-Si in the same sample, but three times faster than silicide formed on pure c-Si(111). The crystalline texture and grain size of the metal and silicide films were examined.

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

Influence of film thickness on optical and electrical properties of hydrogenated amorphous silicon

1987 ◽  
Vol 150 (1) ◽  
pp. 1-9 ◽  
Author(s):  
F. Demichelis ◽  
G. Kaniadakis ◽  
E. Mezzetti ◽  
P. Mpawenayo ◽  
A. Tagliaferro ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optical And Electrical Properties ◽  
Hydrogenated Amorphous
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