Hot-electron model in doped silicon thermistors

2002 ◽  
Author(s):  
D. Liu ◽  
M. Galeazzi ◽  
D. McCammon ◽  
W. T. Sanders ◽  
B. Smith ◽  
...  
Keyword(s):  
Hot Electron ◽  
Electron Model ◽  
Doped Silicon

Hot-electron effects in strongly localized doped silicon at low temperature

2007 ◽  
Vol 76 (15) ◽  
Author(s):  
M. Galeazzi ◽  
D. Liu ◽  
D. McCammon ◽  
L. E. Rocks ◽  
W. T. Sanders ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hot Electron ◽  
Doped Silicon ◽  
Electron Effects

Processing Of Shallow (Rp<150Å) Implanted Layers With Electron Beams

1982 ◽  
Vol 13 ◽  
Author(s):  
G.B. Mcmillan ◽  
J.M. Shannon ◽  
H. Ahmed
Keyword(s):  
Annealing Temperature ◽  
Computer Modelling ◽  
Electron Beams ◽  
Hot Electron ◽  
Electron Device ◽  
Device Structures ◽  
Diffusion Effects ◽  
Doped Silicon ◽  
Multiple Scan ◽  
High Concentrations

ABSTRACTThe multiple-scan method of electron beam annealing has been used to activate shallow (Rp<150Å), highly doped silicon layers produced by ion implantation of arsenic at 10keV. Beam conditions have been optimised (600Wcm−2 for 100ms) to produce essentially undiffused layers, as determined by high resolution SIMS, containing high concentrations of electrically active arsenic impurities. Computer modelling of diffusion effects in such layers has been used to identify optimum beam conditions and the calculations have been compared with experimental results. Hot electron device structures, which depend on negligible diffusion and high electrical activity, have been fabricated using the multiplescan method with a peak annealing temperature of 900°C.

scholarly journals Hot electron relaxation: Exact solution for a many-electron model

1997 ◽  
Vol 55 (20) ◽  
pp. 13564-13574 ◽  
Author(s):  
K. Schönhammer ◽  
C. Wöhler
Keyword(s):  
Exact Solution ◽  
Hot Electron ◽  
Electron Model ◽  
Electron Relaxation

Lucky-electron model of channel hot-electron injection in MOSFET'S

1984 ◽  
Vol 31 (9) ◽  
pp. 1116-1125 ◽  
Author(s):  
Simon Tam ◽  
Ping-Keung Ko ◽  
Chenming Hu
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Electron Model ◽  
Hot Electron Injection

Study of PtSi/Si(100) Interfaces by Ballistic -Electronemission Microscopy

1993 ◽  
Vol 320 ◽  
Author(s):  
Bruce R. Turner ◽  
L. J. Schowalter ◽  
E. Y. Lee ◽  
J. R. Jimenez
Keyword(s):  
Band Structure ◽  
Schottky Barrier ◽  
Mean Free Path ◽  
Momentum Conservation ◽  
Hot Electron ◽  
Attenuation Length ◽  
Electron Model ◽  
Semiconductor Interface ◽  
Turn On ◽  
Good Spatial Resolution

ABSTRACTThe PtSi/Si interface is of technological interest for Schottky barrier infrared detectors. We are studying PtSi/Si heterostructures using ballistic -electron-emission microscopy (BEEM), an STM-based technique that uses the STM tip to inject hot electrons at a particular energy into the metal overlayer. The BEEM technique allows imaging of the Schottky barrier with good spatial resolution (of the order of tens of nanometers) and allows the measurement of the hot electron attenuation length in the metal overlayer. Our results indicate a Schottky barrier of 0.87 eV for PtSi/Si n-type, and an attenuation length of 4 nm for electrons with an energy of 1 eV above the metal Fermi level. The attenuation length we measure is a convolution of the electron elastic and inelastic mean free path lengths.We have also used an ac BEEM technique to observe inelastic scattering events at the metalsemiconductor interface in PtSi/Si(100) n-type. There are several features visible in the spectrum, including one at 1040 meV which we attribute to optical phonon-assisted electron-hole pair creation near the metal- semiconductor interface in analogy to a feature we have observed at the same energy in the Au/Si(100) ac BEEM spectrum. Higher-energy features appear at 1230 meV and 1300 meV. Similar features appeared in the Au/Si(100) spectrum at 1120 meV and 1230 meV.We also suggest that the traditional assumption of momentum conservation parallel to the Schottky barrier interface is unnecessary to obtain a quadratic turn on of the BEEM current above the threshold. If electrons are elastically scattered at the interface so that momentum is not conserved, the increase in the ratio of the density of states in the semiconductor to those in the metal will also give a quadratic turn on even when the band structure is much more complicated than a nearly free electron model. This model also explains why the simple square-root dependence of the photoresponse on wavelength above threshold observed in all metal/semiconductor Schottky barriers despite the complications in band structure.

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

2012 ◽  
Vol 59 (4) ◽  
pp. 983-993 ◽  
Author(s):  
Alban Zaka ◽  
Pierpaolo Palestri ◽  
Quentin Rafhay ◽  
Raphaël Clerc ◽  
Matteo Iellina ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Hot Electron ◽  
Electron Model
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