Processing Of Shallow (Rp<150Å) Implanted Layers With Electron Beams

1982 ◽  
Vol 13 ◽  
Author(s):  
G.B. Mcmillan ◽  
J.M. Shannon ◽  
H. Ahmed
Keyword(s):  
Annealing Temperature ◽  
Computer Modelling ◽  
Electron Beams ◽  
Hot Electron ◽  
Electron Device ◽  
Device Structures ◽  
Diffusion Effects ◽  
Doped Silicon ◽  
Multiple Scan ◽  
High Concentrations

ABSTRACTThe multiple-scan method of electron beam annealing has been used to activate shallow (Rp<150Å), highly doped silicon layers produced by ion implantation of arsenic at 10keV. Beam conditions have been optimised (600Wcm−2 for 100ms) to produce essentially undiffused layers, as determined by high resolution SIMS, containing high concentrations of electrically active arsenic impurities. Computer modelling of diffusion effects in such layers has been used to identify optimum beam conditions and the calculations have been compared with experimental results. Hot electron device structures, which depend on negligible diffusion and high electrical activity, have been fabricated using the multiplescan method with a peak annealing temperature of 900°C.

Hot-electron effects in strongly localized doped silicon at low temperature

2007 ◽  
Vol 76 (15) ◽  
Author(s):  
M. Galeazzi ◽  
D. Liu ◽  
D. McCammon ◽  
L. E. Rocks ◽  
W. T. Sanders ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hot Electron ◽  
Doped Silicon ◽  
Electron Effects

scholarly journals Manifestation of the spontaneous parity-time symmetry breaking phase transition in hot-electron photodetection based on a tri-layered metamaterial

Nanophotonics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 495-504 ◽  
Author(s):  
Qiang Bai
Keyword(s):  
Phase Transition ◽  
Theoretical Model ◽  
Symmetry Breaking ◽  
Pt Symmetry ◽  
Coupled Mode Theory ◽  
Hot Electron ◽  
Electron Device ◽  
Coupled Mode ◽  
Time Symmetry ◽  
Existence Conditions

AbstractWe theoretically and numerically demonstrate that the spontaneous parity-time (PT) symmetry breaking phase transition can be realized respectively by using two independent tuning ways in a tri-layered metamaterial that consists of periodic array of metal-semiconductor Schottky junctions. The existence conditions of PT symmetry and its phase transition are obtained by using a theoretical model based on the coupled mode theory. A hot-electron photodetection based on the same tri-layered metamaterial is proposed, which can directly show the spontaneous PT symmetry breaking phase transition in photocurrent and possesses dynamical tunability and switchability. This work extends the concept of PT symmetry into the hot-electron photodetection, enriches the functionality of the metamaterial and the hot-electron device, and has varieties of potential and important applications in optoelectronics, photodetection, photovoltaics, and photocatalytics.

High‐gain lateral hot‐electron device

1989 ◽  
Vol 55 (14) ◽  
pp. 1421-1423 ◽  
Author(s):  
A. Palevski ◽  
C. P. Umbach ◽  
M. Heiblum
Keyword(s):  
High Gain ◽  
Hot Electron ◽  
Electron Device

Excitation of lower hybrid waves by electron beams in finite geometry plasmas. Part 1. Body waves

1978 ◽  
Vol 19 (2) ◽  
pp. 281-294 ◽  
Author(s):  
Magdi M. Shoucri ◽  
Réal R. J. Gagné
Keyword(s):  
Electron Beam ◽  
Electron Beams ◽  
Finite Geometry ◽  
Body Waves ◽  
Lower Hybrid ◽  
Hot Electron ◽  
Cold Electron ◽  
Small Density ◽  
Hybrid Waves ◽  
Lower Hybrid Waves

The quasi-static lower hybrid eigenmodes of a plasma column in a cylindrical waveguide are determined, and their linear excitation by a small density electron beam is discussed for the cases of a hot electron beam as well as for a cold electron beam. It is shown that under certain conditions, finite geometry effects introduce important quantitative and qualitative differences with respect to the results obtained in an infinite geometry.

Broad-band microwave detection with a novel 2D hot-electron device

1998 ◽  
Vol 23 (5) ◽  
pp. 1079-1082 ◽  
Author(s):  
S. Barbieri ◽  
F. Mango ◽  
F. Beltram ◽  
M. Lazzarino ◽  
L. Sorba
Keyword(s):  
Broad Band ◽  
Hot Electron ◽  
Electron Device ◽  
Microwave Detection

ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY

2006 ◽  
Vol 16 (02) ◽  
pp. 479-501 ◽  
Author(s):  
Marvin H. White ◽  
Yu (Richard) Wang ◽  
Stephen J. Wrazien ◽  
Yijie (Sandy) Zhao
Keyword(s):  
Cost Effectiveness ◽  
Electric Fields ◽  
Cmos Technology ◽  
Floating Gate ◽  
Hot Electron ◽  
Device Structure ◽  
Semiconductor Memory ◽  
Nonvolatile Semiconductor Memory ◽  
Device Structures ◽  
Dielectric Devices

This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.

scholarly journals Resistive Low-Temperature Sensor Based on the SiO2ZrO2 Film for Detection of High Concentrations of NO2 Gas

Chemosensors ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 67 ◽  
Author(s):  
Tatiana Myasoedova ◽  
Tatiana Mikhailova ◽  
Galina Yalovega ◽  
Nina Plugotarenko
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Composite Films ◽  
Film Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Accelerated Stability ◽  
Initial Resistance ◽  
High Concentrations ◽  
Thermally Treated

The SiO2ZrO2 composite films were prepared by means of sol-gel technology and characterized by scanning electron microscopy, energy dispersive X-ray (EDX) analysis, and X-ray diffraction. The presence of the stable monoclinic ZrO2 with an impurity of tetragonal phases is shown. The film surface is characterized by the presence of ZrOCl2·6H2O or ZrCl(OH)/ZrCl(OH)2 grains. The crystallite size negligibly depends on the annealing temperature of the film and amount to 10–12 nm and 9–12 nm for the films thermally treated at 200 °C and 500 °C, respectively. The film’s resistance is rather sensitive to the presence of NO2 impurities in the air at a low operating temperature (25 °C). Accelerated stability tests of the initial resistance showed high stability and reproducibility of the sensor based on the SiO2ZrO2 film thermally treated at 500 °C.

Sign in / Sign up

Export Citation Format

Share Document