scholarly journals Theory of the strongly nonlinear electrodynamic response of graphene: A hot electron model

2019 ◽  
Vol 100 (11) ◽  
Author(s):  
S. A. Mikhailov
Keyword(s):  
Hot Electron ◽  
Nonlinear Electrodynamic ◽  
Electron Model ◽  
Strongly Nonlinear

scholarly journals Hot electron relaxation: Exact solution for a many-electron model

1997 ◽  
Vol 55 (20) ◽  
pp. 13564-13574 ◽  
Author(s):  
K. Schönhammer ◽  
C. Wöhler
Keyword(s):  
Exact Solution ◽  
Hot Electron ◽  
Electron Model ◽  
Electron Relaxation

Lucky-electron model of channel hot-electron injection in MOSFET'S

1984 ◽  
Vol 31 (9) ◽  
pp. 1116-1125 ◽  
Author(s):  
Simon Tam ◽  
Ping-Keung Ko ◽  
Chenming Hu
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Electron Model ◽  
Hot Electron Injection

Hot-electron model in doped silicon thermistors

2002 ◽  
Author(s):  
D. Liu ◽  
M. Galeazzi ◽  
D. McCammon ◽  
W. T. Sanders ◽  
B. Smith ◽  
...  
Keyword(s):  
Hot Electron ◽  
Electron Model ◽  
Doped Silicon

Study of PtSi/Si(100) Interfaces by Ballistic -Electronemission Microscopy

1993 ◽  
Vol 320 ◽  
Author(s):  
Bruce R. Turner ◽  
L. J. Schowalter ◽  
E. Y. Lee ◽  
J. R. Jimenez
Keyword(s):  
Band Structure ◽  
Schottky Barrier ◽  
Mean Free Path ◽  
Momentum Conservation ◽  
Hot Electron ◽  
Attenuation Length ◽  
Electron Model ◽  
Semiconductor Interface ◽  
Turn On ◽  
Good Spatial Resolution

ABSTRACTThe PtSi/Si interface is of technological interest for Schottky barrier infrared detectors. We are studying PtSi/Si heterostructures using ballistic -electron-emission microscopy (BEEM), an STM-based technique that uses the STM tip to inject hot electrons at a particular energy into the metal overlayer. The BEEM technique allows imaging of the Schottky barrier with good spatial resolution (of the order of tens of nanometers) and allows the measurement of the hot electron attenuation length in the metal overlayer. Our results indicate a Schottky barrier of 0.87 eV for PtSi/Si n-type, and an attenuation length of 4 nm for electrons with an energy of 1 eV above the metal Fermi level. The attenuation length we measure is a convolution of the electron elastic and inelastic mean free path lengths.We have also used an ac BEEM technique to observe inelastic scattering events at the metalsemiconductor interface in PtSi/Si(100) n-type. There are several features visible in the spectrum, including one at 1040 meV which we attribute to optical phonon-assisted electron-hole pair creation near the metal- semiconductor interface in analogy to a feature we have observed at the same energy in the Au/Si(100) ac BEEM spectrum. Higher-energy features appear at 1230 meV and 1300 meV. Similar features appeared in the Au/Si(100) spectrum at 1120 meV and 1230 meV.We also suggest that the traditional assumption of momentum conservation parallel to the Schottky barrier interface is unnecessary to obtain a quadratic turn on of the BEEM current above the threshold. If electrons are elastically scattered at the interface so that momentum is not conserved, the increase in the ratio of the density of states in the semiconductor to those in the metal will also give a quadratic turn on even when the band structure is much more complicated than a nearly free electron model. This model also explains why the simple square-root dependence of the photoresponse on wavelength above threshold observed in all metal/semiconductor Schottky barriers despite the complications in band structure.

Nonlinear Electrodynamic and Optical Properties of Graphene

2011 ◽  
Vol 324 ◽  
pp. 237-240
Author(s):  
Sergey A. Mikhailov
Keyword(s):  
Optical Properties ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Nonlinear Susceptibility ◽  
Electromagnetic Response ◽  
Nonlinear Electrodynamic ◽  
External Radiation ◽  
Strongly Nonlinear ◽  
Mixing Effects ◽  
New Material

Graphene is a recently discovered new material with unique physical properties. In this paper we discuss its electrodynamic and optical properties. It is shown that the electromagnetic response of graphene to the external radiation is strongly nonlinear and such phenomena as the frequency harmonics generation and frequency mixing effects can be observed in it. The nonlinear susceptibility of graphene is higher than that of many other materials.We predict that under certain conditions the plasmon enhanced second harmonic generation can be observed in graphene.

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

2012 ◽  
Vol 59 (4) ◽  
pp. 983-993 ◽  
Author(s):  
Alban Zaka ◽  
Pierpaolo Palestri ◽  
Quentin Rafhay ◽  
Raphaël Clerc ◽  
Matteo Iellina ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Hot Electron ◽  
Electron Model

Fast ion predictions from a simple hot-electron model

1985 ◽  
Vol 28 (8) ◽  
pp. 2591 ◽  
Author(s):  
Dushan Mitrovich
Keyword(s):  
Hot Electron ◽  
Electron Model ◽  
Fast Ion
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