Enhanced performance of CoFe/AlO[sub x]/CoFe magnetic tunnel junctions prepared by an off-axis rf remote plasma oxidation method

2002 ◽  
Vol 91 (10) ◽  
pp. 7953 ◽  
Author(s):  
K. S. Yoon ◽  
J. H. Park ◽  
J. Y. Yang ◽  
C. O. Kim ◽  
J. P. Hong
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Oxidation Method ◽  
Remote Plasma Oxidation

Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9nm Al barriers

2005 ◽  
Vol 86 (19) ◽  
pp. 192502 ◽  
Author(s):  
Ricardo Ferreira ◽  
Paulo P. Freitas ◽  
Maureen MacKenzie ◽  
John N. Chapman
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Low Resistance ◽  
Remote Plasma Oxidation

Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method

2001 ◽  
Vol 79 (8) ◽  
pp. 1160-1162 ◽  
Author(s):  
K. S. Yoon ◽  
J. H. Park ◽  
J. H. Choi ◽  
J. Y. Yang ◽  
C. H. Lee ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Rf Plasma ◽  
Plasma Oxidation ◽  
Oxidation Method

Improvement of electrical properties for high-κ dielectrics grown by MOCVD via cyclic remote plasma oxidation

2002 ◽  
Author(s):  
Sadayoshi Horii ◽  
Masayuki Asai ◽  
Hironobu Miya ◽  
Kazuhiko Yamamoto ◽  
Masaaki Niwa
Keyword(s):  
Electrical Properties ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Remote Plasma Oxidation

Remote Plasma Oxidation and Atomic Layer Etching of MoS2

2016 ◽  
Vol 8 (29) ◽  
pp. 19119-19126 ◽  
Author(s):  
Hui Zhu ◽  
Xiaoye Qin ◽  
Lanxia Cheng ◽  
Angelica Azcatl ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Remote Plasma Oxidation ◽  
Atomic Layer Etching

Some Properties of Ultra Thin Oxides Grown in Afterglow Oxygen Plasma

1992 ◽  
Vol 268 ◽  
Author(s):  
P. C. Chen ◽  
J. Y. Lin ◽  
Y. J. Hsu ◽  
H. L. Hwang
Keyword(s):  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Trap Density ◽  
Ftir Analysis ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Depth Profiles ◽  
Lower Temperature ◽  
Oxygen Oxidation ◽  
Remote Plasma Oxidation

ABSTRACTMicrowave remote plasma oxidation were used to study the oxidation of Si and SiGe samples at a lower temperature. C–V measurements were performed to investigate the trap density, and the corresponding bonding structures of thin oxide were revealed by FTIR analysis. SIMS depth profiles were used to reveal the extent of the Ge segregation in SiGe samples. The system can grow ultra thin SiO2 with lower effective trap density. And Ge segregation can be largely suppressed by atomic oxygen oxidation at a lower temperature.

Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma

1992 ◽  
Vol 281 ◽  
Author(s):  
P. C. Chen ◽  
J. Y. Lin ◽  
Y. J. Hsut ◽  
H. L. Hwang
Keyword(s):  
Low Temperatures ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Depth Profiles ◽  
Lower Temperature ◽  
Oxygen Oxidation ◽  
Remote Plasma Oxidation ◽  
Oxidation System

ABSTRACTMicrowave remote plasma oxidation system was used to study the oxidation of SiGe samples at low temperatures. The extent of Ge segregation at oxide/SiGe interface was investigated by using SIMS depth profiles. By comparing the segregation factors, the Ge segregation in the samples oxidized by atomic oxygen at 500 °C was much less than that in the samples oxidized without plasma at 950 °C. The Ge segregation has been largely suppressed by atomic oxygen oxidation at lower temperature.

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