Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9nm Al barriers

2005 ◽  
Vol 86 (19) ◽  
pp. 192502 ◽  
Author(s):  
Ricardo Ferreira ◽  
Paulo P. Freitas ◽  
Maureen MacKenzie ◽  
John N. Chapman
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Low Resistance ◽  
Remote Plasma Oxidation

Low resistance tunnel junctions with remote plasma underoxidized thick barriers

2005 ◽  
Vol 97 (10) ◽  
pp. 10C903 ◽  
Author(s):  
R. Ferreira ◽  
P. P. Freitas ◽  
M. MacKenzie ◽  
J. N. Chapman
Keyword(s):  
Tunnel Junctions ◽  
Remote Plasma ◽  
Low Resistance

Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method

2001 ◽  
Vol 79 (8) ◽  
pp. 1160-1162 ◽  
Author(s):  
K. S. Yoon ◽  
J. H. Park ◽  
J. H. Choi ◽  
J. Y. Yang ◽  
C. H. Lee ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Rf Plasma ◽  
Plasma Oxidation ◽  
Oxidation Method

Improvement of electrical properties for high-κ dielectrics grown by MOCVD via cyclic remote plasma oxidation

2002 ◽  
Author(s):  
Sadayoshi Horii ◽  
Masayuki Asai ◽  
Hironobu Miya ◽  
Kazuhiko Yamamoto ◽  
Masaaki Niwa
Keyword(s):  
Electrical Properties ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Remote Plasma Oxidation

Remote Plasma Oxidation and Atomic Layer Etching of MoS2

2016 ◽  
Vol 8 (29) ◽  
pp. 19119-19126 ◽  
Author(s):  
Hui Zhu ◽  
Xiaoye Qin ◽  
Lanxia Cheng ◽  
Angelica Azcatl ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Remote Plasma Oxidation ◽  
Atomic Layer Etching

Transport Properties of Low Resistance Underoxidized Magnetic Tunnel Junctions

2007 ◽  
Vol 43 (6) ◽  
pp. 2815-2817 ◽  
Author(s):  
J. Ventura ◽  
R. Ferreira ◽  
J. M. Teixeira ◽  
A. M. Pereira ◽  
J. P. Araujo ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Low Resistance

High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2semiconducting barrier with a low resistance–area product

2016 ◽  
Vol 10 (1) ◽  
pp. 013008 ◽  
Author(s):  
Koki Mukaiyama ◽  
Shinya Kasai ◽  
Yukiko K. Takahashi ◽  
Kouta Kondou ◽  
Yoshichika Otani ◽  
...  
Keyword(s):  
Output Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Low Resistance ◽  
Area Product ◽  
High Output Voltage ◽  
High Output
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