Some Properties of Ultra Thin Oxides Grown in Afterglow Oxygen Plasma

1992 ◽  
Vol 268 ◽  
Author(s):  
P. C. Chen ◽  
J. Y. Lin ◽  
Y. J. Hsu ◽  
H. L. Hwang
Keyword(s):  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Trap Density ◽  
Ftir Analysis ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Depth Profiles ◽  
Lower Temperature ◽  
Oxygen Oxidation ◽  
Remote Plasma Oxidation

ABSTRACTMicrowave remote plasma oxidation were used to study the oxidation of Si and SiGe samples at a lower temperature. C–V measurements were performed to investigate the trap density, and the corresponding bonding structures of thin oxide were revealed by FTIR analysis. SIMS depth profiles were used to reveal the extent of the Ge segregation in SiGe samples. The system can grow ultra thin SiO2 with lower effective trap density. And Ge segregation can be largely suppressed by atomic oxygen oxidation at a lower temperature.

Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma

1992 ◽  
Vol 281 ◽  
Author(s):  
P. C. Chen ◽  
J. Y. Lin ◽  
Y. J. Hsut ◽  
H. L. Hwang
Keyword(s):  
Low Temperatures ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Depth Profiles ◽  
Lower Temperature ◽  
Oxygen Oxidation ◽  
Remote Plasma Oxidation ◽  
Oxidation System

ABSTRACTMicrowave remote plasma oxidation system was used to study the oxidation of SiGe samples at low temperatures. The extent of Ge segregation at oxide/SiGe interface was investigated by using SIMS depth profiles. By comparing the segregation factors, the Ge segregation in the samples oxidized by atomic oxygen at 500 °C was much less than that in the samples oxidized without plasma at 950 °C. The Ge segregation has been largely suppressed by atomic oxygen oxidation at lower temperature.

Improvement of electrical properties for high-κ dielectrics grown by MOCVD via cyclic remote plasma oxidation

2002 ◽  
Author(s):  
Sadayoshi Horii ◽  
Masayuki Asai ◽  
Hironobu Miya ◽  
Kazuhiko Yamamoto ◽  
Masaaki Niwa
Keyword(s):  
Electrical Properties ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Remote Plasma Oxidation

Remote Plasma Oxidation and Atomic Layer Etching of MoS2

2016 ◽  
Vol 8 (29) ◽  
pp. 19119-19126 ◽  
Author(s):  
Hui Zhu ◽  
Xiaoye Qin ◽  
Lanxia Cheng ◽  
Angelica Azcatl ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Remote Plasma Oxidation ◽  
Atomic Layer Etching

Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9nm Al barriers

2005 ◽  
Vol 86 (19) ◽  
pp. 192502 ◽  
Author(s):  
Ricardo Ferreira ◽  
Paulo P. Freitas ◽  
Maureen MacKenzie ◽  
John N. Chapman
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Low Resistance ◽  
Remote Plasma Oxidation

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties

2019 ◽  
Vol 58 (SE) ◽  
pp. SEEC02 ◽  
Author(s):  
Noriharu Takada ◽  
Noriyuki Taoka ◽  
Taishi Yamamoto ◽  
Akio Ohta ◽  
Nguyen Xuan Truyen ◽  
...  
Keyword(s):  
Plasma Oxidation ◽  
Photoluminescence Properties ◽  
Remote Plasma ◽  
Remote Plasma Oxidation

Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

2003 ◽  
Vol 83 (11) ◽  
pp. 2229-2231 ◽  
Author(s):  
Kazuhiko Yamamoto ◽  
Shigenori Hayashi ◽  
Masaaki Niwa ◽  
Masayuki Asai ◽  
Sadayoshi Horii ◽  
...  
Keyword(s):  
Physical Properties ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Remote Plasma Oxidation

Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation

2008 ◽  
Vol 52 (4) ◽  
pp. 1103-1108 ◽  
Author(s):  
Seokhoon Kim ◽  
Sanghyun Woo ◽  
Hyungchul Kim ◽  
Inhoe Kim ◽  
Keunwoo Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Layer Deposition ◽  
Remote Plasma Oxidation
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