Two-Band Tunneling Currents and Stress-Induced Leakage in Ultra-Thin SiO2 Films

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Okhonin ◽  
A. Ils ◽  
D. Bouvet ◽  
P. Fazan ◽  
G. Guegan ◽  
...  
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Electron Tunneling ◽  
Interface Trap Density ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Tunneling Currents ◽  
Stress Induced Leakage Current ◽  
Valence Band Electron ◽  
Nordheim Tunneling

ABSTRACTThe conduction band and valence band electron tunneling currents in ultra-thin SiO2 films at the transition from direct to Fowler-Nordheim tunneling regimes are studied. The slopes of the current voltage characteristics agree well with the simulations performed. The Stress-Induced Leakage Current (SILC) behavior is quite similar for both conduction and valence band currents even if the amplitude of the valence band SILC is much lower. We show that a linear dependence exists between the stress-induced interface trap density and both valence and conduction band SILC. A new model of SILC is also proposed.

scholarly journals Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

2005 ◽  
Vol 52 (9) ◽  
pp. 2061-2066 ◽  
Author(s):  
J.-W. Wu ◽  
J.-W. You ◽  
H.-C. Ma ◽  
C.-C. Cheng ◽  
C.-F. Hsu ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Band Electron ◽  
Ultrathin Oxide ◽  
Valence Band Electron

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Effects of Additive Elements on Electrical Properties of Tantalum Oxide Films.

1995 ◽  
Vol 378 ◽  
Author(s):  
Hisayoshi Fujikawa ◽  
Yasunori Taga
Keyword(s):  
Electrical Properties ◽  
Conduction Mechanism ◽  
Defect Density ◽  
Tantalum Oxide ◽  
Composite Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrical Conduction Mechanisms ◽  
Insulating Properties ◽  
Nordheim Tunneling

AbstractTa2O5-based composite films prepared by magnetron sputtering have been investigated with respect to their dielectric properties. As additive third oxides, Y2O3 and WO3 were found to be effective in improving insulating properties without decreasing their dielectric constant. Furthermore, electrical properties of Ta2O5-Y2O3 films were investigated by measuring the current-voltage characteristics in the temperature range from 100 to 330 K. Measurement of temperature dependence of the leakage current revealed that the conduction mechanism at RT changed from the Poole-Frenkel type to the Fowler-Nordheim tunneling type by adding Y2O3 into Ta2O5. Based on the detailed analysis of the results, it is concluded that the addition of Y2O3 into the Ta2O5 film is effective in the reduction of defect density without high-temperature annealing and the alteration of electrical conduction mechanisms of the films.

Growth and Electrical Performance of Heterojunction P+ Si1−x−yGexCy/p+ Si Diodes

1995 ◽  
Vol 402 ◽  
Author(s):  
C. L. Chang ◽  
A. St. Amour ◽  
L. D. Lanzerotti ◽  
J. C. Sturm
Keyword(s):  
Valence Band ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Thermal Chemical Vapor Deposition ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Carbon Concentrations ◽  
Valence Band Discontinuity ◽  
Germanium Concentration

AbstractWe have fabricated heterojunction p+ Si1−x−yGexCy/ p+ Si diodes. The SiGeC layers were grown epitaxially on Si (100) substrates by the rapid thermal chemical vapor deposition (RTCVD) technique using methysilane gas as a carbon precursor. The germanium concentration is 20% in these SiGeC alloys and the carbon concentrations are in the range of 0% to 1%. By studying the current-voltage characteristics of these diodes as a function of temperature the valence band discontinuities between SiGeC and Si layers were obtained as a function of carbon concentrations. We have found that the valence band discontinuity of the SiGe/Si heterostructure decreases by II meV when 1% of carbon is incorporated. Photoluminescence (PL) results show that 1% carbon increases the bandgap of strained p+SiGe alloys by 25 meV. This would imply that the conduction band discontinuity of SiGe/Si will decrease by 14 meV when 1% carbon is incorporated.

A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

2007 ◽  
Vol 54 (2) ◽  
pp. 316-322 ◽  
Author(s):  
W. Wu ◽  
Xin Li ◽  
G. Gildenblat ◽  
G.O. Workman ◽  
S. Veeraraghavan ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Compact Model ◽  
Band Electron ◽  
Valence Band Electron

Determination of valence band offsets from Si/Si1−xGex/Si using temperature‐dependent current–voltage characteristics

1996 ◽  
Vol 79 (5) ◽  
pp. 2463-2466 ◽  
Author(s):  
O. Chretien ◽  
A. Souifi ◽  
R. Apetz ◽  
L. Vescan ◽  
H. Lüth ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Band Offsets ◽  
Current Voltage ◽  
Current Voltage Characteristics
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