Growth of high mobility InSb by metalorganic chemical vapor deposition

1994 ◽  
Vol 23 (2) ◽  
pp. 75-79 ◽  
Author(s):  
D. L. Partin ◽  
L. Green ◽  
J. Heremans
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

1999 ◽  
Vol 86 (10) ◽  
pp. 5850-5857 ◽  
Author(s):  
S. Keller ◽  
G. Parish ◽  
P. T. Fini ◽  
S. Heikman ◽  
C.-H. Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition

1988 ◽  
Vol 131 ◽  
Author(s):  
Konstantinos P. Giapis ◽  
Lu Da-Cheng ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Gaas Substrates ◽  
Downflow Reactor ◽  
Very High ◽  
Metalorganic Chemical

ABSTRACTThe growth of ZnSe on GaAs substrates by metalorganic chemical vapor deposition was investigated in a specially designed vertical downflow reactor. Dimethylzinc was used as the Zn source while different Se source compounds (hydrogen selenide (H2Se), diethylselenide and methylallylselenide) were employed to determine the effect of different source combinations on morphology, thickness uniformity, growth rate, electrical properties and photoluminescence (PL) characteristics of the grown ZnSe films. The H2Se was produced in situ by reaction of H2 and Se followed by distillation to control the amount of H2Se entering the reaction zone. H2Se produced very high mobility films with good PL spectra but poor surface morphology. Diethylselenide led to layers of good morphology and PL characteristics but the films were highly resistive. Unusual surface features were observed for methylallylselenide.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Sign in / Sign up

Export Citation Format

Share Document