Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition
2004 ◽
Vol 43
(8A)
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pp. 5262-5268
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2003 ◽
Vol 42
(Part 1, No. 9B)
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pp. 5922-5926
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2001 ◽
Vol 40
(Part 2, No. 4B)
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pp. L371-L373
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2008 ◽
Vol 310
(7-9)
◽
pp. 2377-2381
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