Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition

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pp. 045502 ◽  
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Kei May Lau
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M. O. Manasreh ◽  
D. J. Friedman ◽  
W. Q. Ma ◽  
C. L. Workman ◽  
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S.E. Babcock ◽  
C.A. Paulson ◽  
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...  

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