Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

2015 ◽  
Vol 117 (8) ◽  
pp. 085301 ◽  
Author(s):  
Jr-Tai Chen ◽  
Chih-Wei Hsu ◽  
Urban Forsberg ◽  
Erik Janzén
1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.


1999 ◽  
Vol 38 (Part 2, No. 7A) ◽  
pp. L703-L705 ◽  
Author(s):  
Takayuki Yuasa ◽  
Yoshihiro Ueta ◽  
Yuhzoh Tsuda ◽  
Atushi Ogawa ◽  
Mototaka Taneya ◽  
...  

1999 ◽  
Vol 86 (10) ◽  
pp. 5850-5857 ◽  
Author(s):  
S. Keller ◽  
G. Parish ◽  
P. T. Fini ◽  
S. Heikman ◽  
C.-H. Chen ◽  
...  

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