Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

2001 ◽  
Vol 90 (10) ◽  
pp. 5115-5119 ◽  
Author(s):  
F. Vigué ◽  
P. Vennéguès ◽  
C. Deparis ◽  
S. Vézian ◽  
M. Laügt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Modes

Growth modes in atomic hydrogen‐assisted molecular beam epitaxy of GaAs

1995 ◽  
Vol 67 (5) ◽  
pp. 676-678 ◽  
Author(s):  
Yoshitaka Okada ◽  
Tomoya Fujita ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Growth Modes

scholarly journals Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

2021 ◽  
Author(s):  
Liming Wang ◽  
Yichi Zhang ◽  
Hao Sun ◽  
Jie You ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vertical Growth ◽  
Growth Modes

Lateral and vertical growth modes of defect-free SiGeSn nanostructures are observed and systematically investigated both experimentally and theoretically.

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN

2007 ◽  
Vol 91 (16) ◽  
pp. 161904 ◽  
Author(s):  
G. Koblmüller ◽  
S. Fernández-Garrido ◽  
E. Calleja ◽  
J. S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Modes ◽  
In Situ Investigation

Growth modes in metal-organic molecular beam epitaxy of TiO2 on r-plane sapphire

2009 ◽  
Vol 27 (2) ◽  
pp. 230-233 ◽  
Author(s):  
Bharat Jalan ◽  
Roman Engel-Herbert ◽  
Joël Cagnon ◽  
Susanne Stemmer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Modes ◽  
Metal Organic

The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

2003 ◽  
Vol 796 ◽  
Author(s):  
Prabhakar Bandaru ◽  
Subal Sahni ◽  
Eli Yablonovitch ◽  
Hyung-Jun Kim ◽  
Ya-Hong Xie
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Si Substrates ◽  
Surface Hydrogen ◽  
Growth Modes ◽  
Device Properties ◽  
Cmos Processing

ABSTRACTWe report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

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