Molecular-beam epitaxy and migration-enhanced epitaxy growth modes of GaAs on pseudomorphic Si films grown on GaAs(100) substrates

1992 ◽  
Vol 10 (5) ◽  
pp. 2157 ◽  
Author(s):  
M. López
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Modes ◽  
Migration Enhanced Epitaxy ◽  
And Migration ◽  
Si Films

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 221-227 ◽  
Author(s):  
Takafumi Yao ◽  
Hiroaki Nakahara ◽  
Hirofumi Matuhata ◽  
Yasumasa Okada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration

Generation and Suppression of Stacking Faults in Gap Layers Grown on Si(100) Substrates by Molecular Beam Epitaxy and Migration Enhanced Epitaxy

1996 ◽  
Vol 441 ◽  
Author(s):  
Y. Takagi ◽  
H. Yonezu ◽  
K. Samonji ◽  
T. Tsuji ◽  
N. Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Generation Process ◽  
Si Substrates ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
Regular Network ◽  
And Migration

AbstractWe have investigated the generation process of crystalline defects in GaP layers grown on Si substrates (GaP/Si) by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). Transmission electron microscopy observations revealed that a regular network of misfit dislocations was generated in GaP/Si by MEE. On the other hand, threading dislocations as well as interfacial misfit dislocations were observed in GaP/Si by MBE. Moreover, stacking faults were generated in high density at the hetero-interface of GaP/Si by MBE. The density of stacking faults was drastically reduced by MEE.

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

2013 ◽  
Vol 113 (21) ◽  
pp. 214308 ◽  
Author(s):  
Y. L. Casallas-Moreno ◽  
M. Pérez-Caro ◽  
S. Gallardo-Hernández ◽  
M. Ramírez-López ◽  
I. Martínez-Velis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration

Electronic properties of multiple Si δ-doped GaAs layers grown by molecular beam epitaxy and migration-enhanced epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 700-702
Author(s):  
S.M. Shibili ◽  
A.B. Henriques ◽  
C.A.C. Mendonça ◽  
E.C.F. da Silva ◽  
E.A. Meneses ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration
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