Formation of misfit and threading dislocations in molecular-beam epitaxy grown strained layer epitaxy: Role of growth modes

Author(s):  
Jasprit Singh
2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.


1997 ◽  
Vol 175-176 ◽  
pp. 1270-1277 ◽  
Author(s):  
Z.R. Wasilewski ◽  
S.J. Rolfe ◽  
R.A. Wilson

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  

1995 ◽  
Vol 67 (5) ◽  
pp. 676-678 ◽  
Author(s):  
Yoshitaka Okada ◽  
Tomoya Fujita ◽  
Mitsuo Kawabe

2021 ◽  
Author(s):  
Liming Wang ◽  
Yichi Zhang ◽  
Hao Sun ◽  
Jie You ◽  
Yuanhao Miao ◽  
...  

Lateral and vertical growth modes of defect-free SiGeSn nanostructures are observed and systematically investigated both experimentally and theoretically.


2020 ◽  
Vol 544 ◽  
pp. 125720
Author(s):  
Marta Sawicka ◽  
Natalia Fiuczek ◽  
Paweł Wolny ◽  
Anna Feduniewicz-Żmuda ◽  
Marcin Siekacz ◽  
...  

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