scholarly journals Normal-incidence spectroscopic ellipsometry for critical dimension monitoring

2001 ◽  
Vol 78 (25) ◽  
pp. 3983-3985 ◽  
Author(s):  
Hsu-Ting Huang ◽  
Wei Kong ◽  
Fred Lewis Terry
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Normal Incidence ◽  
Critical Dimension

Spectroscopic Ellipsometry and Raman Studies on Sputtered TiO2 Thin Films

2005 ◽  
Vol 106 ◽  
pp. 127-132
Author(s):  
B. Karunagaran ◽  
Young Kuk Kim ◽  
Kyung Hae Kim ◽  
S.K. Dhungel ◽  
J.S. Yoo ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Tio2 Thin Film ◽  
Normal Incidence ◽  
Silicon Substrates ◽  
Titanium Dioxide Films ◽  
Sputtering Pressure ◽  
Deposited Films ◽  
Post Deposition

Titanium dioxide films were deposited using DC magnetron sputtering technique onto silicon substrates at ambient temperature and at an oxygen partial pressure of 7×10 –5 mbar and sputtering pressure (Ar + O2) of 1×10–3 mbar. The composition of the films, analyzed by Auger Electron Spectroscopy (AES), revealed the stoichiometry with an O and Ti ratio of 2.08. The optical constants of the as-deposited TiO2 thin film were determined by Spectroscopic Ellipsometry in the photon energy range 1.2 to 5.5 eV at room temperature. The measured dielectric-function spectra reveal distinct structures at energies of the E1, E1+D1 and E2 critical points due to interband transitions. The Dielectric constant values were found to be substantially lower than those for the bulk TiO2. The dielectric related optical constants, such as the refractive index, extinction coefficient, absorption coefficient and normal incidence of reflectivity are presented and analyzed. The deposited films were calcinated at 673 and 773 K. The influence of post-deposition calcination on the Raman scattering of the films was studied. The existence of Raman active modes A1g, B1g and Eg corresponding to the Raman shifts are reported in this paper. The improvement of crystallinity of the TiO2 films as shown by the Raman scattering studies has also been reported.

Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1426-1428 ◽  
Author(s):  
T. H. Ghong ◽  
S.-H. Han ◽  
J.-M. Chung ◽  
J. S. Byun ◽  
Y. D. Kim ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Dimension ◽  
Roughness Analysis
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