Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

Hiroshi Watanabe; Shin-ichi Takagi

doi:10.1063/1.1368868

Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

Journal of Applied Physics ◽

10.1063/1.1368868 ◽

2001 ◽

Vol 90 (3) ◽

pp. 1600-1607 ◽

Cited By ~ 62

Author(s):

Hiroshi Watanabe ◽

Shin-ichi Takagi

Keyword(s):

Band Gap ◽

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling ◽

Band Gap Narrowing

Download Full-text

Modelling of direct tunneling gate leakage current of floating-gate CMOS transistor in sub 100 nm technologies

Analog Integrated Circuits and Signal Processing ◽

10.1007/s10470-015-0553-8 ◽

2015 ◽

Vol 84 (1) ◽

pp. 67-73 ◽

Cited By ~ 3

Author(s):

Zina Saheb ◽

Ezz I. El-Masry

Keyword(s):

Leakage Current ◽

Floating Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling ◽

Cmos Transistor

Download Full-text

Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.807446 ◽

2002 ◽

Vol 49 (12) ◽

pp. 2288-2295 ◽

Cited By ~ 60

Author(s):

Leland Chang ◽

K.J. Yang ◽

Yee-Chia Yeo ◽

I. Polishchuk ◽

Tsu-Jae King ◽

...

Keyword(s):

Leakage Current ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

Download Full-text

Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824275 ◽

2003 ◽

Author(s):

H.S. Momose ◽

T. Ohguro ◽

E. Morifuji ◽

H. Sugaya ◽

S. Nakamura ◽

...

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gate Electrode ◽

Direct Tunneling ◽

Thin Gate Oxide

Download Full-text

Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

IEEE Electron Device Letters ◽

10.1109/55.877204 ◽

2000 ◽

Vol 21 (11) ◽

pp. 540-542 ◽

Cited By ~ 111

Author(s):

Yee Chia Yeo ◽

Qiang Lu ◽

Wen Chin Lee ◽

Tsu-Jae King ◽

Chenming Hu ◽

...

Keyword(s):

Silicon Nitride ◽

Leakage Current ◽

Gate Dielectric ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

Download Full-text

Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979428 ◽

2002 ◽

Cited By ~ 1

Author(s):

Leland Chang ◽

K.J. Yang ◽

Yee-Chia Yeo ◽

Yang-Kyu Choi ◽

Tsu-Jae King ◽

...

Keyword(s):

Leakage Current ◽

Thin Body ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

Download Full-text

InxGa1−xSb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current

2012 IEEE International Conference on Electro/Information Technology ◽

10.1109/eit.2012.6220725 ◽

2012 ◽

Author(s):

Md. Hasibul Alam ◽

Iftikhar Ahmad Niaz ◽

Imtiaz Ahmed ◽

Zubair Al Azim ◽

Nadim Chowdhury ◽

...

Keyword(s):

Performance Analysis ◽

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling ◽

Self Consistent

Download Full-text

Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current

ECS Meeting Abstracts ◽

10.1149/ma2016-01/16/1003 ◽

2016 ◽

Keyword(s):

Performance Analysis ◽

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling ◽

Capacitance Voltage ◽

Self Consistent

Download Full-text

Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.1486022 ◽

2002 ◽

Vol 92 (2) ◽

pp. 937-943 ◽

Cited By ~ 8

Author(s):

K. Alam ◽

S. Zaman ◽

M. M. Chowdhury ◽

M. R. Khan ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Inelastic Scattering ◽

Leakage Current ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

Download Full-text

Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current

ECS Transactions ◽

10.1149/07202.0189ecst ◽

2016 ◽

Vol 72 (2) ◽

pp. 189-195

Author(s):

I. Ahmed ◽

S. Chowdhury ◽

M. H. Alam ◽

I. A. Niaz ◽

Q. D. M. Khosru

Keyword(s):

Performance Analysis ◽

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling ◽

Capacitance Voltage ◽

Self Consistent

Download Full-text

Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.128.885 ◽

2008 ◽

Vol 128 (6) ◽

pp. 885-889

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

Ion Implanted

Download Full-text