Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

Leland Chang; K.J. Yang;  Yee-Chia Yeo; I. Polishchuk;  Tsu-Jae King;  Chenming Hu

doi:10.1109/ted.2002.807446

Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.807446 ◽

2002 ◽

Vol 49 (12) ◽

pp. 2288-2295 ◽

Cited By ~ 60

Author(s):

Leland Chang ◽

K.J. Yang ◽

Yee-Chia Yeo ◽

I. Polishchuk ◽

Tsu-Jae King ◽

...

Keyword(s):

Leakage Current ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

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Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979428 ◽

2002 ◽

Cited By ~ 1

Author(s):

Leland Chang ◽

K.J. Yang ◽

Yee-Chia Yeo ◽

Yang-Kyu Choi ◽

Tsu-Jae King ◽

...

Keyword(s):

Leakage Current ◽

Thin Body ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

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Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.02.026 ◽

2017 ◽

Vol 109 ◽

pp. 13-22 ◽

Cited By ~ 1

Author(s):

Monika Bhattacharya ◽

Jyotika Jogi ◽

R.S. Gupta ◽

Mridula Gupta

Keyword(s):

Leakage Current ◽

Shot Noise ◽

Noise Figure ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Minimum Noise ◽

Minimum Noise Figure

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Modelling of direct tunneling gate leakage current of floating-gate CMOS transistor in sub 100 nm technologies

Analog Integrated Circuits and Signal Processing ◽

10.1007/s10470-015-0553-8 ◽

2015 ◽

Vol 84 (1) ◽

pp. 67-73 ◽

Cited By ~ 3

Author(s):

Zina Saheb ◽

Ezz I. El-Masry

Keyword(s):

Leakage Current ◽

Floating Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling ◽

Cmos Transistor

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Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

Solid-State Electronics ◽

10.1016/j.sse.2013.07.009 ◽

2013 ◽

Vol 89 ◽

pp. 111-115

Author(s):

Ghader Darbandy ◽

Thomas Gneiting ◽

Heidrun Alius ◽

Joaquín Alvarado ◽

Antonio Cerdeira ◽

...

Keyword(s):

Leakage Current ◽

Parameter Extraction ◽

Extraction Technique ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Double Gate Mosfet

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Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Cited By ~ 12

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage

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Study of gate leakage current in symmetric double gate MOSFETs with high-κ/stacked dielectrics

Thin Solid Films ◽

10.1016/j.tsf.2005.09.053 ◽

2006 ◽

Vol 504 (1-2) ◽

pp. 317-320 ◽

Cited By ~ 6

Author(s):

P.V. Nagaraju ◽

Amitava DasGupta

Keyword(s):

Leakage Current ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage

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Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824275 ◽

2003 ◽

Author(s):

H.S. Momose ◽

T. Ohguro ◽

E. Morifuji ◽

H. Sugaya ◽

S. Nakamura ◽

...

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gate Electrode ◽

Direct Tunneling ◽

Thin Gate Oxide

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Gate leakage current of a double gate N-MOS On (111) silicon - A quantum mechanical study

2008 International Conference on Computer and Communication Engineering ◽

10.1109/iccce.2008.4580749 ◽

2008 ◽

Author(s):

Sabbir Ahmed ◽

Ahsan-Ul-Alam ◽

Md. Kawsar Alam ◽

Quazi Deen Mohd Khosru

Keyword(s):

Leakage Current ◽

Quantum Mechanical ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Mechanical Study ◽

Quantum Mechanical Study

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Compact analytical modeling of the gate leakage current partitioning for Double Gate MOSFET device

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135198 ◽

2011 ◽

Author(s):

Ghader Darbandy ◽

Francois Lime ◽

Antonio Cerdeira ◽

Magali Estrada ◽

Salvador Ivan Garduno ◽

...

Keyword(s):

Leakage Current ◽

Analytical Modeling ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Double Gate Mosfet

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Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

Journal of Applied Physics ◽

10.1063/1.1368868 ◽

2001 ◽

Vol 90 (3) ◽

pp. 1600-1607 ◽

Cited By ~ 62

Author(s):

Hiroshi Watanabe ◽

Shin-ichi Takagi

Keyword(s):

Band Gap ◽

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling ◽

Band Gap Narrowing

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