Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal–oxide–semiconductor transistors

2002 ◽  
Vol 92 (2) ◽  
pp. 937-943 ◽  
Author(s):  
K. Alam ◽  
S. Zaman ◽  
M. M. Chowdhury ◽  
M. R. Khan ◽  
A. Haque
Keyword(s):  
Metal Oxide ◽  
Inelastic Scattering ◽  
Leakage Current ◽  
Deep Submicron ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Direct Tunneling

Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

2016 ◽  
Vol 619 ◽  
pp. 48-52 ◽  
Author(s):  
Chengji Jin ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
He Guan ◽  
Zheng Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Semiconductor Structures

Study on Nano Complementary Metal Oxide Semiconductor Gate Leakage Current

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2628-2632 ◽  
Author(s):  
Heng-Sheng Huang ◽  
Chia-Hung Huang ◽  
Yen-Ching Wu ◽  
Yao-Kai Hsu ◽  
Jeng-Kang Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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