Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal–oxide–semiconductor field-effect transistors

Nuditha Vibhavie Amarasinghe; Zeynep Çelik-Butler; Abdol Keshavarz

doi:10.1063/1.1367404

Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1367404 ◽

2001 ◽

Vol 89 (10) ◽

pp. 5526-5532 ◽

Cited By ~ 38

Author(s):

Nuditha Vibhavie Amarasinghe ◽

Zeynep Çelik-Butler ◽

Abdol Keshavarz

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signals ◽

Oxide Trap

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Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.120530 ◽

1997 ◽

Vol 71 (26) ◽

pp. 3874-3876 ◽

Cited By ~ 5

Author(s):

N. Lukyanchikova ◽

M. V. Petrichuk ◽

N. Garbar ◽

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signals

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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Applied Physics Letters ◽

10.1063/1.4821858 ◽

2013 ◽

Vol 103 (12) ◽

pp. 123511 ◽

Cited By ~ 373

Author(s):

Masataka Higashiwaki ◽

Kohei Sasaki ◽

Takafumi Kamimura ◽

Man Hoi Wong ◽

Daivasigamani Krishnamurthy ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Simulation of Temperature Dependence of Microwave Noise in Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.1690 ◽

2000 ◽

Vol 39 (Part 1, No. 4A) ◽

pp. 1690-1693 ◽

Cited By ~ 4

Author(s):

Michael S. Obrecht ◽

Tajinder Manku ◽

Mohamed I. Elmasry

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Microwave Noise

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Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4931662 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124505 ◽

Cited By ~ 7

Author(s):

Clint Naquin ◽

Mark Lee ◽

Hal Edwards ◽

Guru Mathur ◽

Tathagata Chatterjee ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.4885394 ◽

2014 ◽

Vol 104 (26) ◽

pp. 263512 ◽

Cited By ~ 7

Author(s):

Pengpeng Ren ◽

Runsheng Wang ◽

Xiaobo Jiang ◽

Yingxin Qiu ◽

Changze Liu ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Coupling Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Trap

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Random telegraph signals and low-frequency noise in n-metal–oxide–semiconductor field-effect transistors with ultranarrow channels

Applied Physics Letters ◽

10.1063/1.126600 ◽

2000 ◽

Vol 76 (22) ◽

pp. 3259-3261 ◽

Cited By ~ 14

Author(s):

H. M. Bu ◽

Y. Shi ◽

X. L. Yuan ◽

J. Wu ◽

S. L. Gu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Random Telegraph Signals

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Modeling random telegraph signals in the gate current of metal–oxide–semiconductor field effect transistors after oxide breakdown

Journal of Applied Physics ◽

10.1063/1.1579134 ◽

2003 ◽

Vol 94 (1) ◽

pp. 703-708 ◽

Cited By ~ 19

Author(s):

A. Avellán ◽

D. Schroeder ◽

W. Krautschneider

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Oxide Breakdown ◽

Random Telegraph Signals

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Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

Applied Physics Letters ◽

10.1063/1.3046725 ◽

2008 ◽

Vol 93 (24) ◽

pp. 243503 ◽

Cited By ~ 6

Author(s):

Xiaodong Yang ◽

Srivatsan Parthasarathy ◽

Yongke Sun ◽

Andrew Koehler ◽

Toshikazu Nishida ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Mechanisms ◽

Insight Into

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Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1360779 ◽

2001 ◽

Vol 78 (18) ◽

pp. 2790-2792 ◽

Cited By ~ 19

Author(s):

Alejandro Avellan ◽

Wolfgang Krautschneider ◽

Stefan Schwantes

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signals

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Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.7750 ◽

2005 ◽

Vol 44 (11) ◽

pp. 7750-7755 ◽

Cited By ~ 10

Author(s):

Naoki Yasuda ◽

Hirokazu Hisamatsu ◽

Hiroyuki Ota ◽

Wataru Mizubayashi ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Weak Temperature Dependence

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