Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

Pengpeng Ren; Runsheng Wang; Xiaobo Jiang; Yingxin Qiu; Changze Liu; Ru Huang

doi:10.1063/1.4885394

Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.4885394 ◽

2014 ◽

Vol 104 (26) ◽

pp. 263512 ◽

Cited By ~ 7

Author(s):

Pengpeng Ren ◽

Runsheng Wang ◽

Xiaobo Jiang ◽

Yingxin Qiu ◽

Changze Liu ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Coupling Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Trap

Download Full-text

Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3457388 ◽

2010 ◽

Vol 96 (25) ◽

pp. 253502 ◽

Cited By ~ 19

Author(s):

Yen-Ting Chen ◽

Han Zhao ◽

Yanzhen Wang ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.99 ◽

2008 ◽

Vol 47 (1) ◽

pp. 99-103 ◽

Cited By ~ 18

Author(s):

Yoshifumi Nishi ◽

Atsuhiro Kinoshita ◽

Daisuke Hagishima ◽

Junji Koga

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4885765 ◽

2014 ◽

Vol 104 (26) ◽

pp. 263507 ◽

Cited By ~ 7

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Ryosho Nakane ◽

Osamu Ichikawa ◽

Takenori Osada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Vertical Scaling

Download Full-text

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

Download Full-text

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Cited By ~ 3

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

20 Nm

Download Full-text

Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2010.04.033 ◽

2010 ◽

Vol 54 (9) ◽

pp. 919-924 ◽

Cited By ~ 31

Author(s):

T.D. Lin ◽

H.C. Chiu ◽

P. Chang ◽

Y.H. Chang ◽

Y.D. Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

Download Full-text

Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7 ◽

2007 ◽

Vol 46 (1) ◽

pp. 7-13 ◽

Cited By ~ 2

Author(s):

Shimpei Tsujikawa ◽

Katsuya Shiga ◽

Hiroshi Umeda ◽

Jiro Yugami

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

Download Full-text

Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2807832 ◽

2007 ◽

Vol 91 (20) ◽

pp. 203506 ◽

Cited By ~ 4

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Yukio Nakabayashi ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility ◽

Stress Effects ◽

P Type

Download Full-text

Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

Download Full-text

Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Cited By ~ 21

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

And Control

Download Full-text