Modeling random telegraph signals in the gate current of metal–oxide–semiconductor field effect transistors after oxide breakdown

A. Avellán; D. Schroeder; W. Krautschneider

doi:10.1063/1.1579134

Modeling random telegraph signals in the gate current of metal–oxide–semiconductor field effect transistors after oxide breakdown

Journal of Applied Physics ◽

10.1063/1.1579134 ◽

2003 ◽

Vol 94 (1) ◽

pp. 703-708 ◽

Cited By ~ 19

Author(s):

A. Avellán ◽

D. Schroeder ◽

W. Krautschneider

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Oxide Breakdown ◽

Random Telegraph Signals

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Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.120530 ◽

1997 ◽

Vol 71 (26) ◽

pp. 3874-3876 ◽

Cited By ~ 5

Author(s):

N. Lukyanchikova ◽

M. V. Petrichuk ◽

N. Garbar ◽

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signals

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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack

Applied Physics Letters ◽

10.1063/1.2916821 ◽

2008 ◽

Vol 92 (16) ◽

pp. 163508 ◽

Cited By ~ 15

Author(s):

Debabrata Maji ◽

Felice Crupi ◽

Gino Giusi ◽

Calogero Pace ◽

Eddy Simoen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Gate Current

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Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1367404 ◽

2001 ◽

Vol 89 (10) ◽

pp. 5526-5532 ◽

Cited By ~ 38

Author(s):

Nuditha Vibhavie Amarasinghe ◽

Zeynep Çelik-Butler ◽

Abdol Keshavarz

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signals ◽

Oxide Trap

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Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.1776640 ◽

2004 ◽

Vol 96 (6) ◽

pp. 3473-3477

Author(s):

M. C. Chen ◽

S. H. Ku ◽

C. T. Chan ◽

Tahui Wang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Bulk Metal ◽

Oxide Breakdown ◽

Thin Oxide

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Improvement of punchthrough‐induced gate‐oxide breakdown inn‐channel metal‐oxide‐semiconductor field‐effect transistors using rapid thermal nitridation

Applied Physics Letters ◽

10.1063/1.107882 ◽

1992 ◽

Vol 61 (4) ◽

pp. 453-455 ◽

Cited By ~ 2

Author(s):

M. Q. Huang ◽

P. T. Lai ◽

Z. J. Ma ◽

H. Wong ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Breakdown ◽

Thermal Nitridation

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New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.1218 ◽

2001 ◽

Vol 40 (Part 1, No. 3A) ◽

pp. 1218-1221 ◽

Cited By ~ 2

Author(s):

Hai-Ming Lee ◽

Cheng-Jye Liu ◽

Chih-Wei Hsu ◽

Mong-Song Liang ◽

Ya-Chin King ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Band To Band Tunneling

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Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8248 ◽

2008 ◽

Vol 47 (11) ◽

pp. 8248-8252

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Buried Channel ◽

P Type

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Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters ◽

10.1063/1.4955465 ◽

2016 ◽

Vol 109 (1) ◽

pp. 012102 ◽

Cited By ~ 18

Author(s):

Patrick Fiorenza ◽

Antonino La Magna ◽

Marilena Vivona ◽

Fabrizio Roccaforte

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Current Transient ◽

Oxide Semiconductor ◽

Interface Traps ◽

Temperature Dependent ◽

Gate Current ◽

Transient Measurements

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Analytical Model for Direct Tunneling Gate Current in Long-Channel Undoped Cylindrical Surrounding Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.024302 ◽

2013 ◽

Vol 52 (2R) ◽

pp. 024302 ◽

Cited By ~ 2

Author(s):

Ru Han ◽

Cong Li

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Direct Tunneling ◽

Surrounding Gate ◽

Long Channel

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Temperature effect of metal–oxide–semiconductor field-effect-transistors’ gate current evaluated with the mask dimensions

Solid-State Electronics ◽

10.1016/j.sse.2007.09.007 ◽

2008 ◽

Vol 52 (2) ◽

pp. 215-220 ◽

Cited By ~ 1

Author(s):

Chun-Chia Yeh ◽

Chun-Feng Neih ◽

Yen-Yu Chen ◽

Jeng Gong

Keyword(s):

Metal Oxide ◽

Temperature Effect ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current

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